A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs

Takuo KASHIWA; Takayuki KATOH; Naohito YOSHIDA; Hiroyuki MINAMI; Toshiaki KITANO; Makio KOMARU; Noriyuki TANINO; Tadashi TAKAGI; Osamu ISHIHARA

A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs

Takuo KASHIWA, Takayuki KATOH, Naohito YOSHIDA, Hiroyuki MINAMI, Toshiaki KITANO, Makio KOMARU, Noriyuki TANINO, Tadashi TAKAGI, Osamu ISHIHARA

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A Q-band high gain and low noise Variable Gain Amplifier (VGA) module using dual gate AlGaAs/InGaAs pseudomorphic HEMTs has been developed. The dual gate HEMT can be fabricated by the same process of the single gate HEMT which has the gate length of 0.15 µm. The Q-band VGA module consists of a 1-stage low noise amplifier (LNA) MMIC using a single gate HEMT and a 2-stage VGA MMIC using dual gate HEMTs. During the design, an accurate noise modeling is introduced to achieve low noise performance. A fully passivated film is employed to achieve reliability. The VGA module has a gain of more than 20 dB from 41 GHz to 52 GHz and a maximum gain of 24.5 dB at 50 GHz. A gain control range of more than 30 dB is achieved in the same frequency range. A phase deviation is less than 10 degrees in 10 dB gain control range. A minimum noise figure of 1.8 dB with an associated gain of 22 dB is achieved at 43 GHz and the noise figure is less than 2.5 dB with associated gain of more than 20 dB from 41 GHz to 46 GHz when biased for low noise figure. This performance is comparable with the best data ever reported for LNAs at Q-band including both GaAs based HEMTs and InP based HEMTs.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.4 pp.573-579

Publication Date: 1996/04/25

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Type of Manuscript: PAPER

Category: Semiconductor Materials and Devices

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Takuo KASHIWA, Takayuki KATOH, Naohito YOSHIDA, Hiroyuki MINAMI, Toshiaki KITANO, Makio KOMARU, Noriyuki TANINO, Tadashi TAKAGI, Osamu ISHIHARA, "A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 4, pp. 573-579, April 1996, doi: .
Abstract: A Q-band high gain and low noise Variable Gain Amplifier (VGA) module using dual gate AlGaAs/InGaAs pseudomorphic HEMTs has been developed. The dual gate HEMT can be fabricated by the same process of the single gate HEMT which has the gate length of 0.15 µm. The Q-band VGA module consists of a 1-stage low noise amplifier (LNA) MMIC using a single gate HEMT and a 2-stage VGA MMIC using dual gate HEMTs. During the design, an accurate noise modeling is introduced to achieve low noise performance. A fully passivated film is employed to achieve reliability. The VGA module has a gain of more than 20 dB from 41 GHz to 52 GHz and a maximum gain of 24.5 dB at 50 GHz. A gain control range of more than 30 dB is achieved in the same frequency range. A phase deviation is less than 10 degrees in 10 dB gain control range. A minimum noise figure of 1.8 dB with an associated gain of 22 dB is achieved at 43 GHz and the noise figure is less than 2.5 dB with associated gain of more than 20 dB from 41 GHz to 46 GHz when biased for low noise figure. This performance is comparable with the best data ever reported for LNAs at Q-band including both GaAs based HEMTs and InP based HEMTs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_4_573/_p

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@ARTICLE{e79-c_4_573,
author={Takuo KASHIWA, Takayuki KATOH, Naohito YOSHIDA, Hiroyuki MINAMI, Toshiaki KITANO, Makio KOMARU, Noriyuki TANINO, Tadashi TAKAGI, Osamu ISHIHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs},
year={1996},
volume={E79-C},
number={4},
pages={573-579},
abstract={A Q-band high gain and low noise Variable Gain Amplifier (VGA) module using dual gate AlGaAs/InGaAs pseudomorphic HEMTs has been developed. The dual gate HEMT can be fabricated by the same process of the single gate HEMT which has the gate length of 0.15 µm. The Q-band VGA module consists of a 1-stage low noise amplifier (LNA) MMIC using a single gate HEMT and a 2-stage VGA MMIC using dual gate HEMTs. During the design, an accurate noise modeling is introduced to achieve low noise performance. A fully passivated film is employed to achieve reliability. The VGA module has a gain of more than 20 dB from 41 GHz to 52 GHz and a maximum gain of 24.5 dB at 50 GHz. A gain control range of more than 30 dB is achieved in the same frequency range. A phase deviation is less than 10 degrees in 10 dB gain control range. A minimum noise figure of 1.8 dB with an associated gain of 22 dB is achieved at 43 GHz and the noise figure is less than 2.5 dB with associated gain of more than 20 dB from 41 GHz to 46 GHz when biased for low noise figure. This performance is comparable with the best data ever reported for LNAs at Q-band including both GaAs based HEMTs and InP based HEMTs.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 573
EP - 579
AU - Takuo KASHIWA
AU - Takayuki KATOH
AU - Naohito YOSHIDA
AU - Hiroyuki MINAMI
AU - Toshiaki KITANO
AU - Makio KOMARU
AU - Noriyuki TANINO
AU - Tadashi TAKAGI
AU - Osamu ISHIHARA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1996
AB - A Q-band high gain and low noise Variable Gain Amplifier (VGA) module using dual gate AlGaAs/InGaAs pseudomorphic HEMTs has been developed. The dual gate HEMT can be fabricated by the same process of the single gate HEMT which has the gate length of 0.15 µm. The Q-band VGA module consists of a 1-stage low noise amplifier (LNA) MMIC using a single gate HEMT and a 2-stage VGA MMIC using dual gate HEMTs. During the design, an accurate noise modeling is introduced to achieve low noise performance. A fully passivated film is employed to achieve reliability. The VGA module has a gain of more than 20 dB from 41 GHz to 52 GHz and a maximum gain of 24.5 dB at 50 GHz. A gain control range of more than 30 dB is achieved in the same frequency range. A phase deviation is less than 10 degrees in 10 dB gain control range. A minimum noise figure of 1.8 dB with an associated gain of 22 dB is achieved at 43 GHz and the noise figure is less than 2.5 dB with associated gain of more than 20 dB from 41 GHz to 46 GHz when biased for low noise figure. This performance is comparable with the best data ever reported for LNAs at Q-band including both GaAs based HEMTs and InP based HEMTs.
ER -