A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs
Summary :
The authors report on a 40-Gbit/s superdynamic decision IC fabricated with 0.12-µm GaAs MESFETs. The key to attaining high-speed decision IC is not only high-speed flip-flop circuits but also wideband input and output buffer circuits. 40 Gbit/s is the fastest operating speed of decision ICs fabricated with GaAs MESFETs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E80-C No.12 pp.1624-1627
- Publication Date
- 1997/12/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Category
- Electronic Circuits
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Koichi MURATA, Taiichi OTSUJI, Mikio YONEYAMA, Masami TOKUMITSU, "A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 12, pp. 1624-1627, December 1997, doi: .
Abstract: The authors report on a 40-Gbit/s superdynamic decision IC fabricated with 0.12-µm GaAs MESFETs. The key to attaining high-speed decision IC is not only high-speed flip-flop circuits but also wideband input and output buffer circuits. 40 Gbit/s is the fastest operating speed of decision ICs fabricated with GaAs MESFETs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_12_1624/_p
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@ARTICLE{e80-c_12_1624,
author={Koichi MURATA, Taiichi OTSUJI, Mikio YONEYAMA, Masami TOKUMITSU, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs},
year={1997},
volume={E80-C},
number={12},
pages={1624-1627},
abstract={The authors report on a 40-Gbit/s superdynamic decision IC fabricated with 0.12-µm GaAs MESFETs. The key to attaining high-speed decision IC is not only high-speed flip-flop circuits but also wideband input and output buffer circuits. 40 Gbit/s is the fastest operating speed of decision ICs fabricated with GaAs MESFETs.},
keywords={},
doi={},
ISSN={},
month={December},}
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TY - JOUR
TI - A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1624
EP - 1627
AU - Koichi MURATA
AU - Taiichi OTSUJI
AU - Mikio YONEYAMA
AU - Masami TOKUMITSU
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1997
AB - The authors report on a 40-Gbit/s superdynamic decision IC fabricated with 0.12-µm GaAs MESFETs. The key to attaining high-speed decision IC is not only high-speed flip-flop circuits but also wideband input and output buffer circuits. 40 Gbit/s is the fastest operating speed of decision ICs fabricated with GaAs MESFETs.
ER -
English
