IEICE TRANSACTIONS on Electronics
Current Progress in Epitaxial Layer Transfer (ELTRAN(R))
Summary :
The quality of ELTRAN wafers has been improved by pre-injection in epitaxial growth, surface treatment just before bonding, high temperature annealing at bonding, high selective etching and hydrogen annealing. The pre-injection reduces defects. The surface treatment eliminates edge-voids. The high temperature bonding dramatically reduces voids all over the wafer. Hydrogen annealing is very effective for surface flattening and boron out-diffusion. In particular, the edge-void elimination by the surface treatment just before bonding is greatly effective for enlarging the SOI area and reduces the edge exclusion down to only two mm. The gate oxide integrity is well evaluated. This process promises high yield and through-put, because each of the steps can be independently optimized.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E80-C No.3 pp.378-387
- Publication Date
- 1997/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
- Category
- Wafer Technologies
Authors
Kiyofumi SAKAGUCHI
Nobuhiko SATO
Kenji YAMAGATA
Tadashi ATOJI
Yasutomo FUJIYAMA
Jun NAKAYAMA
Takao YONEHARA
Keyword
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Kiyofumi SAKAGUCHI, Nobuhiko SATO, Kenji YAMAGATA, Tadashi ATOJI, Yasutomo FUJIYAMA, Jun NAKAYAMA, Takao YONEHARA, "Current Progress in Epitaxial Layer Transfer (ELTRAN(R))" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 3, pp. 378-387, March 1997, doi: .
Abstract: The quality of ELTRAN wafers has been improved by pre-injection in epitaxial growth, surface treatment just before bonding, high temperature annealing at bonding, high selective etching and hydrogen annealing. The pre-injection reduces defects. The surface treatment eliminates edge-voids. The high temperature bonding dramatically reduces voids all over the wafer. Hydrogen annealing is very effective for surface flattening and boron out-diffusion. In particular, the edge-void elimination by the surface treatment just before bonding is greatly effective for enlarging the SOI area and reduces the edge exclusion down to only two mm. The gate oxide integrity is well evaluated. This process promises high yield and through-put, because each of the steps can be independently optimized.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_3_378/_p
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@ARTICLE{e80-c_3_378,
author={Kiyofumi SAKAGUCHI, Nobuhiko SATO, Kenji YAMAGATA, Tadashi ATOJI, Yasutomo FUJIYAMA, Jun NAKAYAMA, Takao YONEHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Current Progress in Epitaxial Layer Transfer (ELTRAN(R))},
year={1997},
volume={E80-C},
number={3},
pages={378-387},
abstract={The quality of ELTRAN wafers has been improved by pre-injection in epitaxial growth, surface treatment just before bonding, high temperature annealing at bonding, high selective etching and hydrogen annealing. The pre-injection reduces defects. The surface treatment eliminates edge-voids. The high temperature bonding dramatically reduces voids all over the wafer. Hydrogen annealing is very effective for surface flattening and boron out-diffusion. In particular, the edge-void elimination by the surface treatment just before bonding is greatly effective for enlarging the SOI area and reduces the edge exclusion down to only two mm. The gate oxide integrity is well evaluated. This process promises high yield and through-put, because each of the steps can be independently optimized.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Current Progress in Epitaxial Layer Transfer (ELTRAN(R))
T2 - IEICE TRANSACTIONS on Electronics
SP - 378
EP - 387
AU - Kiyofumi SAKAGUCHI
AU - Nobuhiko SATO
AU - Kenji YAMAGATA
AU - Tadashi ATOJI
AU - Yasutomo FUJIYAMA
AU - Jun NAKAYAMA
AU - Takao YONEHARA
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1997
AB - The quality of ELTRAN wafers has been improved by pre-injection in epitaxial growth, surface treatment just before bonding, high temperature annealing at bonding, high selective etching and hydrogen annealing. The pre-injection reduces defects. The surface treatment eliminates edge-voids. The high temperature bonding dramatically reduces voids all over the wafer. Hydrogen annealing is very effective for surface flattening and boron out-diffusion. In particular, the edge-void elimination by the surface treatment just before bonding is greatly effective for enlarging the SOI area and reduces the edge exclusion down to only two mm. The gate oxide integrity is well evaluated. This process promises high yield and through-put, because each of the steps can be independently optimized.
ER -
English
