Ultra-Low Threshold Current Vertical-Cavity Surface-Emitting Lasers for Photonic Integrated Circuits
Summary :
The use of selective oxidation to fabricate vertical-cavity surface-emitting lasers is described. The nativeoxide impacts the device design in two ways, the first being in the introduction of an intracavity dielectric aperture that laterally confines the mode, and the second in the formation of high contrast dielectric Bragg reflectors to shorten the effective cavity length. To date the more important has been the indexconfinement, with record low threshold currents, threshold voltages, and power conversion efficiencies being reported from several groups. However, future designs will likely also benefit from the reduced diffraction loss for a small mode size that is possible with high contrast native oxide/semiconductor mirrors. We describe some of the most important design issues in obtaining ultralow threshold operation.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E80-C No.5 pp.664-674
- Publication Date
- 1997/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Photonic Integrated Circuits)
- Category
- Semiconductor Devices, Circuits and Processing
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Dennis G. DEPPE, Diana L. HUFFAKER, Hongyu DENG, Qing DENG, Tchang-Hun OH, "Ultra-Low Threshold Current Vertical-Cavity Surface-Emitting Lasers for Photonic Integrated Circuits" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 5, pp. 664-674, May 1997, doi: .
Abstract: The use of selective oxidation to fabricate vertical-cavity surface-emitting lasers is described. The nativeoxide impacts the device design in two ways, the first being in the introduction of an intracavity dielectric aperture that laterally confines the mode, and the second in the formation of high contrast dielectric Bragg reflectors to shorten the effective cavity length. To date the more important has been the indexconfinement, with record low threshold currents, threshold voltages, and power conversion efficiencies being reported from several groups. However, future designs will likely also benefit from the reduced diffraction loss for a small mode size that is possible with high contrast native oxide/semiconductor mirrors. We describe some of the most important design issues in obtaining ultralow threshold operation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_5_664/_p
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@ARTICLE{e80-c_5_664,
author={Dennis G. DEPPE, Diana L. HUFFAKER, Hongyu DENG, Qing DENG, Tchang-Hun OH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultra-Low Threshold Current Vertical-Cavity Surface-Emitting Lasers for Photonic Integrated Circuits},
year={1997},
volume={E80-C},
number={5},
pages={664-674},
abstract={The use of selective oxidation to fabricate vertical-cavity surface-emitting lasers is described. The nativeoxide impacts the device design in two ways, the first being in the introduction of an intracavity dielectric aperture that laterally confines the mode, and the second in the formation of high contrast dielectric Bragg reflectors to shorten the effective cavity length. To date the more important has been the indexconfinement, with record low threshold currents, threshold voltages, and power conversion efficiencies being reported from several groups. However, future designs will likely also benefit from the reduced diffraction loss for a small mode size that is possible with high contrast native oxide/semiconductor mirrors. We describe some of the most important design issues in obtaining ultralow threshold operation.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - Ultra-Low Threshold Current Vertical-Cavity Surface-Emitting Lasers for Photonic Integrated Circuits
T2 - IEICE TRANSACTIONS on Electronics
SP - 664
EP - 674
AU - Dennis G. DEPPE
AU - Diana L. HUFFAKER
AU - Hongyu DENG
AU - Qing DENG
AU - Tchang-Hun OH
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1997
AB - The use of selective oxidation to fabricate vertical-cavity surface-emitting lasers is described. The nativeoxide impacts the device design in two ways, the first being in the introduction of an intracavity dielectric aperture that laterally confines the mode, and the second in the formation of high contrast dielectric Bragg reflectors to shorten the effective cavity length. To date the more important has been the indexconfinement, with record low threshold currents, threshold voltages, and power conversion efficiencies being reported from several groups. However, future designs will likely also benefit from the reduced diffraction loss for a small mode size that is possible with high contrast native oxide/semiconductor mirrors. We describe some of the most important design issues in obtaining ultralow threshold operation.
ER -
English
