High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones

Teruyuki SHIMURA; Takeshi MIURA; Yutaka UNEME; Hirofumi NAKANO; Ryo HATTORI; Mutsuyuki OTSUBO; Kazutomi MORI; Akira INOUE; Noriyuki TANINO

High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones

Teruyuki SHIMURA, Takeshi MIURA, Yutaka UNEME, Hirofumi NAKANO, Ryo HATTORI, Mutsuyuki OTSUBO, Kazutomi MORI, Akira INOUE, Noriyuki TANINO

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We present a high performance AlGaAs/GaAs power HBT with very low thermal resistance for digital cellular phones. Device structure with emitter air-bridge is utilized and device layout is optimized to reduce thermal resistance based on three-dimensional thermal flow analysis, and in spite of a rather thick substrate (100 µm), which achieved a low thermal resistance of 23/W for a multi-finger (440 µm²40 fingers) HBT. This 40 finger HBT achieved power added efficiency (PAE) of over 53%, 29.1 dBm output power (P_out) and high associated gain (G_a) of 13.5 dB with 50 kHz adjacent channel leakage power (P_adj) of less than -48 dBc under a 948 MHz π/4-shifted QPSK modulation with 3.4 V emitter-collector voltage. We also investigated the difference of RF performance between two bias modes (constant base voltage and current), and found which mode is adequate for each stage in several stage power amplifier for the first time.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.6 pp.740-745

Publication Date: 1997/06/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)

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Teruyuki SHIMURA, Takeshi MIURA, Yutaka UNEME, Hirofumi NAKANO, Ryo HATTORI, Mutsuyuki OTSUBO, Kazutomi MORI, Akira INOUE, Noriyuki TANINO, "High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 6, pp. 740-745, June 1997, doi: .
Abstract: We present a high performance AlGaAs/GaAs power HBT with very low thermal resistance for digital cellular phones. Device structure with emitter air-bridge is utilized and device layout is optimized to reduce thermal resistance based on three-dimensional thermal flow analysis, and in spite of a rather thick substrate (100 µm), which achieved a low thermal resistance of 23/W for a multi-finger (440 µm²40 fingers) HBT. This 40 finger HBT achieved power added efficiency (PAE) of over 53%, 29.1 dBm output power (P_out) and high associated gain (G_a) of 13.5 dB with 50 kHz adjacent channel leakage power (P_adj) of less than -48 dBc under a 948 MHz π/4-shifted QPSK modulation with 3.4 V emitter-collector voltage. We also investigated the difference of RF performance between two bias modes (constant base voltage and current), and found which mode is adequate for each stage in several stage power amplifier for the first time.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_6_740/_p

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@ARTICLE{e80-c_6_740,
author={Teruyuki SHIMURA, Takeshi MIURA, Yutaka UNEME, Hirofumi NAKANO, Ryo HATTORI, Mutsuyuki OTSUBO, Kazutomi MORI, Akira INOUE, Noriyuki TANINO, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones},
year={1997},
volume={E80-C},
number={6},
pages={740-745},
abstract={We present a high performance AlGaAs/GaAs power HBT with very low thermal resistance for digital cellular phones. Device structure with emitter air-bridge is utilized and device layout is optimized to reduce thermal resistance based on three-dimensional thermal flow analysis, and in spite of a rather thick substrate (100 µm), which achieved a low thermal resistance of 23/W for a multi-finger (440 µm²40 fingers) HBT. This 40 finger HBT achieved power added efficiency (PAE) of over 53%, 29.1 dBm output power (P_out) and high associated gain (G_a) of 13.5 dB with 50 kHz adjacent channel leakage power (P_adj) of less than -48 dBc under a 948 MHz π/4-shifted QPSK modulation with 3.4 V emitter-collector voltage. We also investigated the difference of RF performance between two bias modes (constant base voltage and current), and found which mode is adequate for each stage in several stage power amplifier for the first time.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones
T2 - IEICE TRANSACTIONS on Electronics
SP - 740
EP - 745
AU - Teruyuki SHIMURA
AU - Takeshi MIURA
AU - Yutaka UNEME
AU - Hirofumi NAKANO
AU - Ryo HATTORI
AU - Mutsuyuki OTSUBO
AU - Kazutomi MORI
AU - Akira INOUE
AU - Noriyuki TANINO
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1997
AB - We present a high performance AlGaAs/GaAs power HBT with very low thermal resistance for digital cellular phones. Device structure with emitter air-bridge is utilized and device layout is optimized to reduce thermal resistance based on three-dimensional thermal flow analysis, and in spite of a rather thick substrate (100 µm), which achieved a low thermal resistance of 23/W for a multi-finger (440 µm²40 fingers) HBT. This 40 finger HBT achieved power added efficiency (PAE) of over 53%, 29.1 dBm output power (P_out) and high associated gain (G_a) of 13.5 dB with 50 kHz adjacent channel leakage power (P_adj) of less than -48 dBc under a 948 MHz π/4-shifted QPSK modulation with 3.4 V emitter-collector voltage. We also investigated the difference of RF performance between two bias modes (constant base voltage and current), and found which mode is adequate for each stage in several stage power amplifier for the first time.
ER -