IEICE TRANSACTIONS on Electronics
High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones
Summary :
We present a high performance AlGaAs/GaAs power HBT with very low thermal resistance for digital cellular phones. Device structure with emitter air-bridge is utilized and device layout is optimized to reduce thermal resistance based on three-dimensional thermal flow analysis, and in spite of a rather thick substrate (100 µm), which achieved a low thermal resistance of 23
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E80-C No.6 pp.740-745
- Publication Date
- 1997/06/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
- Category
Authors
Teruyuki SHIMURA
Takeshi MIURA
Yutaka UNEME
Hirofumi NAKANO
Ryo HATTORI
Mutsuyuki OTSUBO
Kazutomi MORI
Akira INOUE
Noriyuki TANINO
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Teruyuki SHIMURA, Takeshi MIURA, Yutaka UNEME, Hirofumi NAKANO, Ryo HATTORI, Mutsuyuki OTSUBO, Kazutomi MORI, Akira INOUE, Noriyuki TANINO, "High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 6, pp. 740-745, June 1997, doi: .
Abstract: We present a high performance AlGaAs/GaAs power HBT with very low thermal resistance for digital cellular phones. Device structure with emitter air-bridge is utilized and device layout is optimized to reduce thermal resistance based on three-dimensional thermal flow analysis, and in spite of a rather thick substrate (100 µm), which achieved a low thermal resistance of 23
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_6_740/_p
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@ARTICLE{e80-c_6_740,
author={Teruyuki SHIMURA, Takeshi MIURA, Yutaka UNEME, Hirofumi NAKANO, Ryo HATTORI, Mutsuyuki OTSUBO, Kazutomi MORI, Akira INOUE, Noriyuki TANINO, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones},
year={1997},
volume={E80-C},
number={6},
pages={740-745},
abstract={We present a high performance AlGaAs/GaAs power HBT with very low thermal resistance for digital cellular phones. Device structure with emitter air-bridge is utilized and device layout is optimized to reduce thermal resistance based on three-dimensional thermal flow analysis, and in spite of a rather thick substrate (100 µm), which achieved a low thermal resistance of 23
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones
T2 - IEICE TRANSACTIONS on Electronics
SP - 740
EP - 745
AU - Teruyuki SHIMURA
AU - Takeshi MIURA
AU - Yutaka UNEME
AU - Hirofumi NAKANO
AU - Ryo HATTORI
AU - Mutsuyuki OTSUBO
AU - Kazutomi MORI
AU - Akira INOUE
AU - Noriyuki TANINO
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1997
AB - We present a high performance AlGaAs/GaAs power HBT with very low thermal resistance for digital cellular phones. Device structure with emitter air-bridge is utilized and device layout is optimized to reduce thermal resistance based on three-dimensional thermal flow analysis, and in spite of a rather thick substrate (100 µm), which achieved a low thermal resistance of 23
ER -
English
