Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O3 Thin Film Capacitors with IrO2 Top Electrode
Summary :
Degradation of ferroelectricity in PZT (Pb(Zr0. 52, Ti0. 48)O3) thin-film capacitors caused by heat treatment in a reductive ambience is investigated. We have found that the degradation of ferroelectricity depends upon the metal used for the top electrode of the PZT capacitor. The increased degradation in the case of a PZT capacitor with Pt electrodes can be explained by a catalytic reaction on the Pt surface. With the use of an IrO2 non-catalytic top electrode, we have made the ferroelectricity of an IrO2/PZT/Pt capacitor retained even after the H2 annealing at 400
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- IEICE TRANSACTIONS on Electronics Vol.E81-C No.4 pp.518-522
- Publication Date
- 1998/04/25
- Publicized
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- Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
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Yoshihisa FUJISAKI, Keiko KUSHIDA-ABDELGHAFAR, Hiroshi MIKI, Yasuhiro SHIMAMOTO, "Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O3 Thin Film Capacitors with IrO2 Top Electrode" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 4, pp. 518-522, April 1998, doi: .
Abstract: Degradation of ferroelectricity in PZT (Pb(Zr0. 52, Ti0. 48)O3) thin-film capacitors caused by heat treatment in a reductive ambience is investigated. We have found that the degradation of ferroelectricity depends upon the metal used for the top electrode of the PZT capacitor. The increased degradation in the case of a PZT capacitor with Pt electrodes can be explained by a catalytic reaction on the Pt surface. With the use of an IrO2 non-catalytic top electrode, we have made the ferroelectricity of an IrO2/PZT/Pt capacitor retained even after the H2 annealing at 400
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_4_518/_p
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@ARTICLE{e81-c_4_518,
author={Yoshihisa FUJISAKI, Keiko KUSHIDA-ABDELGHAFAR, Hiroshi MIKI, Yasuhiro SHIMAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O3 Thin Film Capacitors with IrO2 Top Electrode},
year={1998},
volume={E81-C},
number={4},
pages={518-522},
abstract={Degradation of ferroelectricity in PZT (Pb(Zr0. 52, Ti0. 48)O3) thin-film capacitors caused by heat treatment in a reductive ambience is investigated. We have found that the degradation of ferroelectricity depends upon the metal used for the top electrode of the PZT capacitor. The increased degradation in the case of a PZT capacitor with Pt electrodes can be explained by a catalytic reaction on the Pt surface. With the use of an IrO2 non-catalytic top electrode, we have made the ferroelectricity of an IrO2/PZT/Pt capacitor retained even after the H2 annealing at 400
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O3 Thin Film Capacitors with IrO2 Top Electrode
T2 - IEICE TRANSACTIONS on Electronics
SP - 518
EP - 522
AU - Yoshihisa FUJISAKI
AU - Keiko KUSHIDA-ABDELGHAFAR
AU - Hiroshi MIKI
AU - Yasuhiro SHIMAMOTO
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1998
AB - Degradation of ferroelectricity in PZT (Pb(Zr0. 52, Ti0. 48)O3) thin-film capacitors caused by heat treatment in a reductive ambience is investigated. We have found that the degradation of ferroelectricity depends upon the metal used for the top electrode of the PZT capacitor. The increased degradation in the case of a PZT capacitor with Pt electrodes can be explained by a catalytic reaction on the Pt surface. With the use of an IrO2 non-catalytic top electrode, we have made the ferroelectricity of an IrO2/PZT/Pt capacitor retained even after the H2 annealing at 400
ER -
English
