IEICE TRANSACTIONS on Electronics
0. 012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications
Summary :
A GaAs power amplifier IC has been developed for 1. 9-GHz digital mobile communication applications, such as the handsets of the Japanese personal handy phone system (PHS), which was assembled into a very small 0. 012-cc surface mount plastic package. This power amplifier using refractory WNx/W self-aligned gate MESFETs with p-pocket layers can operate with high efficiency and low distortion with a single 3-V supply. A very low dissipated current of 119 mA was obtained with an output power of 21. 1 dBm and a low 600-kHz adjacent channel leakage power (ACP) of -63 dBc for π/4-shifted quadrature phase shift keying (QPSK) modulated input.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E81-C No.6 pp.985-992
- Publication Date
- 1998/06/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Category
- Microwave and Millimeter Wave Technology
Authors
Masami NAGAOKA
Hironori NAGASAWA
Katsue K. KAWAKYU
Kenji HONMYO
Shinji ISHIDA
Yoshiaki KITAURA
Naotaka UCHITOMI
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Masami NAGAOKA, Hironori NAGASAWA, Katsue K. KAWAKYU, Kenji HONMYO, Shinji ISHIDA, Yoshiaki KITAURA, Naotaka UCHITOMI, "0. 012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 6, pp. 985-992, June 1998, doi: .
Abstract: A GaAs power amplifier IC has been developed for 1. 9-GHz digital mobile communication applications, such as the handsets of the Japanese personal handy phone system (PHS), which was assembled into a very small 0. 012-cc surface mount plastic package. This power amplifier using refractory WNx/W self-aligned gate MESFETs with p-pocket layers can operate with high efficiency and low distortion with a single 3-V supply. A very low dissipated current of 119 mA was obtained with an output power of 21. 1 dBm and a low 600-kHz adjacent channel leakage power (ACP) of -63 dBc for π/4-shifted quadrature phase shift keying (QPSK) modulated input.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_6_985/_p
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@ARTICLE{e81-c_6_985,
author={Masami NAGAOKA, Hironori NAGASAWA, Katsue K. KAWAKYU, Kenji HONMYO, Shinji ISHIDA, Yoshiaki KITAURA, Naotaka UCHITOMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={0. 012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications},
year={1998},
volume={E81-C},
number={6},
pages={985-992},
abstract={A GaAs power amplifier IC has been developed for 1. 9-GHz digital mobile communication applications, such as the handsets of the Japanese personal handy phone system (PHS), which was assembled into a very small 0. 012-cc surface mount plastic package. This power amplifier using refractory WNx/W self-aligned gate MESFETs with p-pocket layers can operate with high efficiency and low distortion with a single 3-V supply. A very low dissipated current of 119 mA was obtained with an output power of 21. 1 dBm and a low 600-kHz adjacent channel leakage power (ACP) of -63 dBc for π/4-shifted quadrature phase shift keying (QPSK) modulated input.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - 0. 012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 985
EP - 992
AU - Masami NAGAOKA
AU - Hironori NAGASAWA
AU - Katsue K. KAWAKYU
AU - Kenji HONMYO
AU - Shinji ISHIDA
AU - Yoshiaki KITAURA
AU - Naotaka UCHITOMI
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1998
AB - A GaAs power amplifier IC has been developed for 1. 9-GHz digital mobile communication applications, such as the handsets of the Japanese personal handy phone system (PHS), which was assembled into a very small 0. 012-cc surface mount plastic package. This power amplifier using refractory WNx/W self-aligned gate MESFETs with p-pocket layers can operate with high efficiency and low distortion with a single 3-V supply. A very low dissipated current of 119 mA was obtained with an output power of 21. 1 dBm and a low 600-kHz adjacent channel leakage power (ACP) of -63 dBc for π/4-shifted quadrature phase shift keying (QPSK) modulated input.
ER -
English
