Well-defined wavelength distributed feedback laser diodes (DFB-LDs) are required in WDM network systems. Since the EDFA gain bands have been expanded, even more wavelengths are needed for large-capacity dense-WDM transmission systems. A precisely pitch-controlled Bragg grating fabricated by electron beam (EB) lithography is very attractive for realizing these DFB-LDs. This paper describes this precise pitch- and phase-controlled grating delineated by a novel method called weighted-dose allocation variable-pitch EB-lithography (WAVE). In this method, an EB-dose profile for the grating is precisely controlled by a combination of the allocation and weighting of multiple exposures. This enables us to fabricate a precise fixed-pitch grating as well as a flexible grating with a continuously chirped structure. The stitching error at the exposure field boundary, the grating pitch, and the phase shift were evaluated by using a moire pattern generated by superimposing the microscope raster scan and the grating on a wafer. We also estimated amounts of the stitching errors from fabricated and calculated lasing characteristics, and clarified that the affect of the errors on the single-mode stability of LDs is negligible. Precise wavelength controlled λ/4 phase shifted DFB-LDs were successfully demonstrated as a result of both the WAVE method and the highly uniform MOVPE crystal growth.
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Yoshiharu MUROYA, Kenji SATO, Tetsuro OKUDA, Takahiro NAKAMURA, Hirohito YAMADA, Toshitaka TORIKAI, "Precisely Wavelength-Controlled Corrugation for DFB Laser Diodes Delineated by Weighted-Dose Electron-Beam Lithography" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 8, pp. 1225-1231, August 1998, doi: .
Abstract: Well-defined wavelength distributed feedback laser diodes (DFB-LDs) are required in WDM network systems. Since the EDFA gain bands have been expanded, even more wavelengths are needed for large-capacity dense-WDM transmission systems. A precisely pitch-controlled Bragg grating fabricated by electron beam (EB) lithography is very attractive for realizing these DFB-LDs. This paper describes this precise pitch- and phase-controlled grating delineated by a novel method called weighted-dose allocation variable-pitch EB-lithography (WAVE). In this method, an EB-dose profile for the grating is precisely controlled by a combination of the allocation and weighting of multiple exposures. This enables us to fabricate a precise fixed-pitch grating as well as a flexible grating with a continuously chirped structure. The stitching error at the exposure field boundary, the grating pitch, and the phase shift were evaluated by using a moire pattern generated by superimposing the microscope raster scan and the grating on a wafer. We also estimated amounts of the stitching errors from fabricated and calculated lasing characteristics, and clarified that the affect of the errors on the single-mode stability of LDs is negligible. Precise wavelength controlled λ/4 phase shifted DFB-LDs were successfully demonstrated as a result of both the WAVE method and the highly uniform MOVPE crystal growth.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_8_1225/_p
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@ARTICLE{e81-c_8_1225,
author={Yoshiharu MUROYA, Kenji SATO, Tetsuro OKUDA, Takahiro NAKAMURA, Hirohito YAMADA, Toshitaka TORIKAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Precisely Wavelength-Controlled Corrugation for DFB Laser Diodes Delineated by Weighted-Dose Electron-Beam Lithography},
year={1998},
volume={E81-C},
number={8},
pages={1225-1231},
abstract={Well-defined wavelength distributed feedback laser diodes (DFB-LDs) are required in WDM network systems. Since the EDFA gain bands have been expanded, even more wavelengths are needed for large-capacity dense-WDM transmission systems. A precisely pitch-controlled Bragg grating fabricated by electron beam (EB) lithography is very attractive for realizing these DFB-LDs. This paper describes this precise pitch- and phase-controlled grating delineated by a novel method called weighted-dose allocation variable-pitch EB-lithography (WAVE). In this method, an EB-dose profile for the grating is precisely controlled by a combination of the allocation and weighting of multiple exposures. This enables us to fabricate a precise fixed-pitch grating as well as a flexible grating with a continuously chirped structure. The stitching error at the exposure field boundary, the grating pitch, and the phase shift were evaluated by using a moire pattern generated by superimposing the microscope raster scan and the grating on a wafer. We also estimated amounts of the stitching errors from fabricated and calculated lasing characteristics, and clarified that the affect of the errors on the single-mode stability of LDs is negligible. Precise wavelength controlled λ/4 phase shifted DFB-LDs were successfully demonstrated as a result of both the WAVE method and the highly uniform MOVPE crystal growth.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - Precisely Wavelength-Controlled Corrugation for DFB Laser Diodes Delineated by Weighted-Dose Electron-Beam Lithography
T2 - IEICE TRANSACTIONS on Electronics
SP - 1225
EP - 1231
AU - Yoshiharu MUROYA
AU - Kenji SATO
AU - Tetsuro OKUDA
AU - Takahiro NAKAMURA
AU - Hirohito YAMADA
AU - Toshitaka TORIKAI
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1998
AB - Well-defined wavelength distributed feedback laser diodes (DFB-LDs) are required in WDM network systems. Since the EDFA gain bands have been expanded, even more wavelengths are needed for large-capacity dense-WDM transmission systems. A precisely pitch-controlled Bragg grating fabricated by electron beam (EB) lithography is very attractive for realizing these DFB-LDs. This paper describes this precise pitch- and phase-controlled grating delineated by a novel method called weighted-dose allocation variable-pitch EB-lithography (WAVE). In this method, an EB-dose profile for the grating is precisely controlled by a combination of the allocation and weighting of multiple exposures. This enables us to fabricate a precise fixed-pitch grating as well as a flexible grating with a continuously chirped structure. The stitching error at the exposure field boundary, the grating pitch, and the phase shift were evaluated by using a moire pattern generated by superimposing the microscope raster scan and the grating on a wafer. We also estimated amounts of the stitching errors from fabricated and calculated lasing characteristics, and clarified that the affect of the errors on the single-mode stability of LDs is negligible. Precise wavelength controlled λ/4 phase shifted DFB-LDs were successfully demonstrated as a result of both the WAVE method and the highly uniform MOVPE crystal growth.
ER -