A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT
Summary :
A GSM900/DCS1800 dual-band AlGaAs/GaAs HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and a d. c. switch. In order to achieve high efficiency, the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedance and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 41.8% for DCS1800.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E82-C No.11 pp.1913-1920
- Publication Date
- 1999/11/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
- Category
- RF Power Devices
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Kazutomi MORI, Kenichiro CHOUMEI, Teruyuki SHIMURA, Tadashi TAKAGI, Yukio IKEDA, Osami ISHIDA, "A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 1913-1920, November 1999, doi: .
Abstract: A GSM900/DCS1800 dual-band AlGaAs/GaAs HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and a d. c. switch. In order to achieve high efficiency, the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedance and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 41.8% for DCS1800.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1913/_p
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@ARTICLE{e82-c_11_1913,
author={Kazutomi MORI, Kenichiro CHOUMEI, Teruyuki SHIMURA, Tadashi TAKAGI, Yukio IKEDA, Osami ISHIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT},
year={1999},
volume={E82-C},
number={11},
pages={1913-1920},
abstract={A GSM900/DCS1800 dual-band AlGaAs/GaAs HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and a d. c. switch. In order to achieve high efficiency, the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedance and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 41.8% for DCS1800.},
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT
T2 - IEICE TRANSACTIONS on Electronics
SP - 1913
EP - 1920
AU - Kazutomi MORI
AU - Kenichiro CHOUMEI
AU - Teruyuki SHIMURA
AU - Tadashi TAKAGI
AU - Yukio IKEDA
AU - Osami ISHIDA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - A GSM900/DCS1800 dual-band AlGaAs/GaAs HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and a d. c. switch. In order to achieve high efficiency, the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedance and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 41.8% for DCS1800.
ER -
English
