A new data-I/O scheme with a hidden writing-recovery architecture has been developed for the megabit-class high operating frequency SRAMs. Read-out nodes in the memory cell are separated from bitline-connected writing nodes so as not to delay sensing initiation due to uncompleted bitline recovery. The data stored in a memory cell are read-out by sensing the differential current signal on a double-rail virtual-GND line along bitlines. Each pair of virtual-GND lines is imaginarily short-circuited by a sense amplifier, so that the read-out circuitry would have large immunity against virtual-GND-line noises. The critical noise level associated with data destruction is analyzed at various supply voltages. The virtual-GND-line-sensed memory cell with the squashed topology, the swing-suppression-type low-power writing circuitry, and the current-sense amplifier with extra negative feedback loops, --which are used in the data-I/O scheme are also mentioned. Assuming a sub array in megabit-class SRAMs, 4 K-words
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Nobutaro SHIBATA, "Current-Sensed SRAM Techniques for Megabit-Class Integration--Progress in Operating Frequency by Using Hidden Writing-Recovery Architecture--" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 2056-2064, November 1999, doi: .
Abstract: A new data-I/O scheme with a hidden writing-recovery architecture has been developed for the megabit-class high operating frequency SRAMs. Read-out nodes in the memory cell are separated from bitline-connected writing nodes so as not to delay sensing initiation due to uncompleted bitline recovery. The data stored in a memory cell are read-out by sensing the differential current signal on a double-rail virtual-GND line along bitlines. Each pair of virtual-GND lines is imaginarily short-circuited by a sense amplifier, so that the read-out circuitry would have large immunity against virtual-GND-line noises. The critical noise level associated with data destruction is analyzed at various supply voltages. The virtual-GND-line-sensed memory cell with the squashed topology, the swing-suppression-type low-power writing circuitry, and the current-sense amplifier with extra negative feedback loops, --which are used in the data-I/O scheme are also mentioned. Assuming a sub array in megabit-class SRAMs, 4 K-words
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_2056/_p
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@ARTICLE{e82-c_11_2056,
author={Nobutaro SHIBATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Current-Sensed SRAM Techniques for Megabit-Class Integration--Progress in Operating Frequency by Using Hidden Writing-Recovery Architecture--},
year={1999},
volume={E82-C},
number={11},
pages={2056-2064},
abstract={A new data-I/O scheme with a hidden writing-recovery architecture has been developed for the megabit-class high operating frequency SRAMs. Read-out nodes in the memory cell are separated from bitline-connected writing nodes so as not to delay sensing initiation due to uncompleted bitline recovery. The data stored in a memory cell are read-out by sensing the differential current signal on a double-rail virtual-GND line along bitlines. Each pair of virtual-GND lines is imaginarily short-circuited by a sense amplifier, so that the read-out circuitry would have large immunity against virtual-GND-line noises. The critical noise level associated with data destruction is analyzed at various supply voltages. The virtual-GND-line-sensed memory cell with the squashed topology, the swing-suppression-type low-power writing circuitry, and the current-sense amplifier with extra negative feedback loops, --which are used in the data-I/O scheme are also mentioned. Assuming a sub array in megabit-class SRAMs, 4 K-words
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - Current-Sensed SRAM Techniques for Megabit-Class Integration--Progress in Operating Frequency by Using Hidden Writing-Recovery Architecture--
T2 - IEICE TRANSACTIONS on Electronics
SP - 2056
EP - 2064
AU - Nobutaro SHIBATA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - A new data-I/O scheme with a hidden writing-recovery architecture has been developed for the megabit-class high operating frequency SRAMs. Read-out nodes in the memory cell are separated from bitline-connected writing nodes so as not to delay sensing initiation due to uncompleted bitline recovery. The data stored in a memory cell are read-out by sensing the differential current signal on a double-rail virtual-GND line along bitlines. Each pair of virtual-GND lines is imaginarily short-circuited by a sense amplifier, so that the read-out circuitry would have large immunity against virtual-GND-line noises. The critical noise level associated with data destruction is analyzed at various supply voltages. The virtual-GND-line-sensed memory cell with the squashed topology, the swing-suppression-type low-power writing circuitry, and the current-sense amplifier with extra negative feedback loops, --which are used in the data-I/O scheme are also mentioned. Assuming a sub array in megabit-class SRAMs, 4 K-words
ER -