Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide

Katsuya SHIGA; Junko KOMORI; Masafumi KATSUMATA; Akinobu TERAMOTO; Yoji MASHIKO

Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide

Katsuya SHIGA, Junko KOMORI, Masafumi KATSUMATA, Akinobu TERAMOTO, Yoji MASHIKO

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A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.

Publication: IEICE TRANSACTIONS on Electronics Vol.E82-C No.4 pp.589-592

Publication Date: 1999/04/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)

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Katsuya SHIGA, Junko KOMORI, Masafumi KATSUMATA, Akinobu TERAMOTO, Yoji MASHIKO, "Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide" in IEICE TRANSACTIONS on Electronics, vol. E82-C, no. 4, pp. 589-592, April 1999, doi: .
Abstract: A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_4_589/_p

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@ARTICLE{e82-c_4_589,
author={Katsuya SHIGA, Junko KOMORI, Masafumi KATSUMATA, Akinobu TERAMOTO, Yoji MASHIKO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide},
year={1999},
volume={E82-C},
number={4},
pages={589-592},
abstract={A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide
T2 - IEICE TRANSACTIONS on Electronics
SP - 589
EP - 592
AU - Katsuya SHIGA
AU - Junko KOMORI
AU - Masafumi KATSUMATA
AU - Akinobu TERAMOTO
AU - Yoji MASHIKO
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1999
AB - A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.
ER -