IEICE TRANSACTIONS on Electronics
A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-µm Flash Memory Cells
Summary :
A new simple method for extracting the capacitance coupling coefficients of sub-0.5-µm flash memory cells is proposed. Different from the previously proposed methods, this method is not affected by a dopant profile of source region because a band-to-band tunneling current from the interface between the drain and the substrate is probed. Use of a reference device eliminates the necessity to make assumptions concerning the electron transport mechanism. Comparison with the other methods shows that the proposed method is simple and accurate.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E82-C No.4 pp.602-606
- Publication Date
- 1999/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Microelectronic Test Structures)
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Keiichi HARAGUCHI, Hitoshi KUME, Masahiro USHIYAMA, Makoto OHKURA, "A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-µm Flash Memory Cells" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 4, pp. 602-606, April 1999, doi: .
Abstract: A new simple method for extracting the capacitance coupling coefficients of sub-0.5-µm flash memory cells is proposed. Different from the previously proposed methods, this method is not affected by a dopant profile of source region because a band-to-band tunneling current from the interface between the drain and the substrate is probed. Use of a reference device eliminates the necessity to make assumptions concerning the electron transport mechanism. Comparison with the other methods shows that the proposed method is simple and accurate.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_4_602/_p
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@ARTICLE{e82-c_4_602,
author={Keiichi HARAGUCHI, Hitoshi KUME, Masahiro USHIYAMA, Makoto OHKURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-µm Flash Memory Cells},
year={1999},
volume={E82-C},
number={4},
pages={602-606},
abstract={A new simple method for extracting the capacitance coupling coefficients of sub-0.5-µm flash memory cells is proposed. Different from the previously proposed methods, this method is not affected by a dopant profile of source region because a band-to-band tunneling current from the interface between the drain and the substrate is probed. Use of a reference device eliminates the necessity to make assumptions concerning the electron transport mechanism. Comparison with the other methods shows that the proposed method is simple and accurate.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-µm Flash Memory Cells
T2 - IEICE TRANSACTIONS on Electronics
SP - 602
EP - 606
AU - Keiichi HARAGUCHI
AU - Hitoshi KUME
AU - Masahiro USHIYAMA
AU - Makoto OHKURA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1999
AB - A new simple method for extracting the capacitance coupling coefficients of sub-0.5-µm flash memory cells is proposed. Different from the previously proposed methods, this method is not affected by a dopant profile of source region because a band-to-band tunneling current from the interface between the drain and the substrate is probed. Use of a reference device eliminates the necessity to make assumptions concerning the electron transport mechanism. Comparison with the other methods shows that the proposed method is simple and accurate.
ER -
English
