IEICE TRANSACTIONS on Electronics
High-Voltage MOS Device Modeling with BSIM3v3 SPICE Model
Summary :
This paper presents a new technique for modeling High-Voltage lightly-doped-drain MOS (HV MOS) devices accurately with the BSIM3v3 SPICE model. Standard SPICE models do not model the voltage dependency of Rs and Rd in HV MOS devices; this causes large discrepancies between the simulated and measured I-V characteristics of HV MOS devices. We propose to assign physical meanings and values different from the original BSIM3v3 model to three of its parameters to represent the voltage dependency of Rs and Rd. With this method, we have succeeded in highly accurate parameter extraction, and the simulated I-V characteristics of HV MOS devices using the extracted parameters match the measured results well. The relationship between the proposed modeling technique and the physical mechanism of HV MOS devices is also discussed based on measurement and device simulation results. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs, so we can use SPICE simulation for accurate circuit design of complex circuits using HV MOS devices.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E82-C No.4 pp.630-637
- Publication Date
- 1999/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Microelectronic Test Structures)
- Category
Authors
Takao MYONO
Eiji NISHIBE
Shuichi KIKUCHI
Katsuhiko IWATSU
Takuya SUZUKI
Yoshisato SASAKI
Kazuo ITOH
Haruo KOBAYASHI
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Takao MYONO, Eiji NISHIBE, Shuichi KIKUCHI, Katsuhiko IWATSU, Takuya SUZUKI, Yoshisato SASAKI, Kazuo ITOH, Haruo KOBAYASHI, "High-Voltage MOS Device Modeling with BSIM3v3 SPICE Model" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 4, pp. 630-637, April 1999, doi: .
Abstract: This paper presents a new technique for modeling High-Voltage lightly-doped-drain MOS (HV MOS) devices accurately with the BSIM3v3 SPICE model. Standard SPICE models do not model the voltage dependency of Rs and Rd in HV MOS devices; this causes large discrepancies between the simulated and measured I-V characteristics of HV MOS devices. We propose to assign physical meanings and values different from the original BSIM3v3 model to three of its parameters to represent the voltage dependency of Rs and Rd. With this method, we have succeeded in highly accurate parameter extraction, and the simulated I-V characteristics of HV MOS devices using the extracted parameters match the measured results well. The relationship between the proposed modeling technique and the physical mechanism of HV MOS devices is also discussed based on measurement and device simulation results. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs, so we can use SPICE simulation for accurate circuit design of complex circuits using HV MOS devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_4_630/_p
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@ARTICLE{e82-c_4_630,
author={Takao MYONO, Eiji NISHIBE, Shuichi KIKUCHI, Katsuhiko IWATSU, Takuya SUZUKI, Yoshisato SASAKI, Kazuo ITOH, Haruo KOBAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Voltage MOS Device Modeling with BSIM3v3 SPICE Model},
year={1999},
volume={E82-C},
number={4},
pages={630-637},
abstract={This paper presents a new technique for modeling High-Voltage lightly-doped-drain MOS (HV MOS) devices accurately with the BSIM3v3 SPICE model. Standard SPICE models do not model the voltage dependency of Rs and Rd in HV MOS devices; this causes large discrepancies between the simulated and measured I-V characteristics of HV MOS devices. We propose to assign physical meanings and values different from the original BSIM3v3 model to three of its parameters to represent the voltage dependency of Rs and Rd. With this method, we have succeeded in highly accurate parameter extraction, and the simulated I-V characteristics of HV MOS devices using the extracted parameters match the measured results well. The relationship between the proposed modeling technique and the physical mechanism of HV MOS devices is also discussed based on measurement and device simulation results. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs, so we can use SPICE simulation for accurate circuit design of complex circuits using HV MOS devices.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - High-Voltage MOS Device Modeling with BSIM3v3 SPICE Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 630
EP - 637
AU - Takao MYONO
AU - Eiji NISHIBE
AU - Shuichi KIKUCHI
AU - Katsuhiko IWATSU
AU - Takuya SUZUKI
AU - Yoshisato SASAKI
AU - Kazuo ITOH
AU - Haruo KOBAYASHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1999
AB - This paper presents a new technique for modeling High-Voltage lightly-doped-drain MOS (HV MOS) devices accurately with the BSIM3v3 SPICE model. Standard SPICE models do not model the voltage dependency of Rs and Rd in HV MOS devices; this causes large discrepancies between the simulated and measured I-V characteristics of HV MOS devices. We propose to assign physical meanings and values different from the original BSIM3v3 model to three of its parameters to represent the voltage dependency of Rs and Rd. With this method, we have succeeded in highly accurate parameter extraction, and the simulated I-V characteristics of HV MOS devices using the extracted parameters match the measured results well. The relationship between the proposed modeling technique and the physical mechanism of HV MOS devices is also discussed based on measurement and device simulation results. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs, so we can use SPICE simulation for accurate circuit design of complex circuits using HV MOS devices.
ER -
English
