Modeling of Channel Boron Distribution in Deep Sub-0.1 µm n-MOSFETs
Summary :
This paper reports the evaluation results of the channel boron distribution in the deep sub-0.1 [µm] n-MOSFETs for the first time. It has been found that the boron depletion effect becomes dominant and the reverse short channel effect becomes less significant in the deep sub-0.1 [µm] n-MOSFETs. It has been also found that the sheet charge distribution responsible for the reverse short channel effect is localized within a distance of 100 [nm] from the source/drain-extension junction.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E82-C No.6 pp.813-820
- Publication Date
- 1999/06/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Shigetaka KUMASHIRO, Hironori SAKAMOTO, Kiyoshi TAKEUCHI, "Modeling of Channel Boron Distribution in Deep Sub-0.1 µm n-MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 813-820, June 1999, doi: .
Abstract: This paper reports the evaluation results of the channel boron distribution in the deep sub-0.1 [µm] n-MOSFETs for the first time. It has been found that the boron depletion effect becomes dominant and the reverse short channel effect becomes less significant in the deep sub-0.1 [µm] n-MOSFETs. It has been also found that the sheet charge distribution responsible for the reverse short channel effect is localized within a distance of 100 [nm] from the source/drain-extension junction.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_813/_p
Copy
@ARTICLE{e82-c_6_813,
author={Shigetaka KUMASHIRO, Hironori SAKAMOTO, Kiyoshi TAKEUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Modeling of Channel Boron Distribution in Deep Sub-0.1 µm n-MOSFETs},
year={1999},
volume={E82-C},
number={6},
pages={813-820},
abstract={This paper reports the evaluation results of the channel boron distribution in the deep sub-0.1 [µm] n-MOSFETs for the first time. It has been found that the boron depletion effect becomes dominant and the reverse short channel effect becomes less significant in the deep sub-0.1 [µm] n-MOSFETs. It has been also found that the sheet charge distribution responsible for the reverse short channel effect is localized within a distance of 100 [nm] from the source/drain-extension junction.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - Modeling of Channel Boron Distribution in Deep Sub-0.1 µm n-MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 813
EP - 820
AU - Shigetaka KUMASHIRO
AU - Hironori SAKAMOTO
AU - Kiyoshi TAKEUCHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - This paper reports the evaluation results of the channel boron distribution in the deep sub-0.1 [µm] n-MOSFETs for the first time. It has been found that the boron depletion effect becomes dominant and the reverse short channel effect becomes less significant in the deep sub-0.1 [µm] n-MOSFETs. It has been also found that the sheet charge distribution responsible for the reverse short channel effect is localized within a distance of 100 [nm] from the source/drain-extension junction.
ER -
English
