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Rudolf STRASSER Siegfried SELBERHERR
We present a simulation system which meets the requirements for practical application of inverse modeling in a professional environment. A tool interface for the integration of arbitrary simulation tools at the user level is introduced and a methodology for the formation of simulation networks is described. A Levenberg-Marquardt optimizer automates the inverse modeling procedure. Strategies for the efficient execution of simulation tools are discussed. An example demonstrates the extraction of doping profile information on the basis of electrical measurements.
Shigetaka KUMASHIRO Hironori SAKAMOTO Kiyoshi TAKEUCHI
This paper reports the evaluation results of the channel boron distribution in the deep sub-0.1 [µm] n-MOSFETs for the first time. It has been found that the boron depletion effect becomes dominant and the reverse short channel effect becomes less significant in the deep sub-0.1 [µm] n-MOSFETs. It has been also found that the sheet charge distribution responsible for the reverse short channel effect is localized within a distance of 100 [nm] from the source/drain-extension junction.
Hirokazu HAYASHI Hideaki MATSUHASHI Koichi FUKUDA Kenji NISHI
We propose a new inverse modeling method to extract 2D channel dopant profile in an MOSFET. The profile is extracted from threshold voltage (Vth) of MOSFETs with a series of gate lengths. The uniqueness of the extracted channel and drain profile is confirmed through test simulations. The extracted profile of actual 0.1 µm nMOSFETs explains reverse short channel effects (RSCE) of threshold voltage dependent on gate length including substrate bias dependence.