IEICE TRANSACTIONS on Electronics
Inverse Modeling and Its Application to MOSFET Channel Profile Extraction
Summary :
We propose a new inverse modeling method to extract 2D channel dopant profile in an MOSFET. The profile is extracted from threshold voltage (Vth) of MOSFETs with a series of gate lengths. The uniqueness of the extracted channel and drain profile is confirmed through test simulations. The extracted profile of actual 0.1 µm nMOSFETs explains reverse short channel effects (RSCE) of threshold voltage dependent on gate length including substrate bias dependence.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E82-C No.6 pp.862-869
- Publication Date
- 1999/06/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
- Category
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Hirokazu HAYASHI, Hideaki MATSUHASHI, Koichi FUKUDA, Kenji NISHI, "Inverse Modeling and Its Application to MOSFET Channel Profile Extraction" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 862-869, June 1999, doi: .
Abstract: We propose a new inverse modeling method to extract 2D channel dopant profile in an MOSFET. The profile is extracted from threshold voltage (Vth) of MOSFETs with a series of gate lengths. The uniqueness of the extracted channel and drain profile is confirmed through test simulations. The extracted profile of actual 0.1 µm nMOSFETs explains reverse short channel effects (RSCE) of threshold voltage dependent on gate length including substrate bias dependence.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_862/_p
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@ARTICLE{e82-c_6_862,
author={Hirokazu HAYASHI, Hideaki MATSUHASHI, Koichi FUKUDA, Kenji NISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Inverse Modeling and Its Application to MOSFET Channel Profile Extraction},
year={1999},
volume={E82-C},
number={6},
pages={862-869},
abstract={We propose a new inverse modeling method to extract 2D channel dopant profile in an MOSFET. The profile is extracted from threshold voltage (Vth) of MOSFETs with a series of gate lengths. The uniqueness of the extracted channel and drain profile is confirmed through test simulations. The extracted profile of actual 0.1 µm nMOSFETs explains reverse short channel effects (RSCE) of threshold voltage dependent on gate length including substrate bias dependence.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Inverse Modeling and Its Application to MOSFET Channel Profile Extraction
T2 - IEICE TRANSACTIONS on Electronics
SP - 862
EP - 869
AU - Hirokazu HAYASHI
AU - Hideaki MATSUHASHI
AU - Koichi FUKUDA
AU - Kenji NISHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - We propose a new inverse modeling method to extract 2D channel dopant profile in an MOSFET. The profile is extracted from threshold voltage (Vth) of MOSFETs with a series of gate lengths. The uniqueness of the extracted channel and drain profile is confirmed through test simulations. The extracted profile of actual 0.1 µm nMOSFETs explains reverse short channel effects (RSCE) of threshold voltage dependent on gate length including substrate bias dependence.
ER -
English
