Equipment Simulation of Production Reactors for Silicon Device Fabrication
Summary :
Equipment simulation can provide valuable support in reactor design and process optimization. This article describes the physical and chemical models used in this technique and the current state of the art of the available software tools is reviewed. Moreover, the potential of equipment simulation will be highlighted by means of three recent examples from advanced quarter micron silicon process development. These include a vertical batch reactor for LPCVD of arsenic doped silicon oxide, a multi station tungsten CVD reactor, and a plasma reactor for silicon etching.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E82-C No.6 pp.992-996
- Publication Date
- 1999/06/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
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Christoph WERNER, "Equipment Simulation of Production Reactors for Silicon Device Fabrication" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 992-996, June 1999, doi: .
Abstract: Equipment simulation can provide valuable support in reactor design and process optimization. This article describes the physical and chemical models used in this technique and the current state of the art of the available software tools is reviewed. Moreover, the potential of equipment simulation will be highlighted by means of three recent examples from advanced quarter micron silicon process development. These include a vertical batch reactor for LPCVD of arsenic doped silicon oxide, a multi station tungsten CVD reactor, and a plasma reactor for silicon etching.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_992/_p
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@ARTICLE{e82-c_6_992,
author={Christoph WERNER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Equipment Simulation of Production Reactors for Silicon Device Fabrication},
year={1999},
volume={E82-C},
number={6},
pages={992-996},
abstract={Equipment simulation can provide valuable support in reactor design and process optimization. This article describes the physical and chemical models used in this technique and the current state of the art of the available software tools is reviewed. Moreover, the potential of equipment simulation will be highlighted by means of three recent examples from advanced quarter micron silicon process development. These include a vertical batch reactor for LPCVD of arsenic doped silicon oxide, a multi station tungsten CVD reactor, and a plasma reactor for silicon etching.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - Equipment Simulation of Production Reactors for Silicon Device Fabrication
T2 - IEICE TRANSACTIONS on Electronics
SP - 992
EP - 996
AU - Christoph WERNER
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - Equipment simulation can provide valuable support in reactor design and process optimization. This article describes the physical and chemical models used in this technique and the current state of the art of the available software tools is reviewed. Moreover, the potential of equipment simulation will be highlighted by means of three recent examples from advanced quarter micron silicon process development. These include a vertical batch reactor for LPCVD of arsenic doped silicon oxide, a multi station tungsten CVD reactor, and a plasma reactor for silicon etching.
ER -
English
