IEICE TRANSACTIONS on Electronics
49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs
Summary :
49-GHz operation for a state-of-the-art static frequency divider using FETs is achieved with high-performance 0.1-µm-gate InAlAs/InGaAs/InP HEMTs and high-speed double-layer interconnections with a thick low-permittivity BCB inter-layer dielectric film. An experiment shows that the propagation delay for the upper-layer line in the double-layer interconnections is less than half of that for the conventional single-layer interconnections directly on InP-substrate. The frequency divider with the double-layer interconnections is about 20% faster than the conventional one with the single-layer interconnections. A delay time analysis reveals that this speed increase is due to the decrease in interconnection propagation delay.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E82-C No.7 pp.1080-1085
- Publication Date
- 1999/07/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
- Category
- Active Devices and Circuits
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Yohtaro UMEDA, Kazuo OSAFUNE, Takatomo ENOKI, Haruki YOKOYAMA, Yasunobu ISHII, "49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 7, pp. 1080-1085, July 1999, doi: .
Abstract: 49-GHz operation for a state-of-the-art static frequency divider using FETs is achieved with high-performance 0.1-µm-gate InAlAs/InGaAs/InP HEMTs and high-speed double-layer interconnections with a thick low-permittivity BCB inter-layer dielectric film. An experiment shows that the propagation delay for the upper-layer line in the double-layer interconnections is less than half of that for the conventional single-layer interconnections directly on InP-substrate. The frequency divider with the double-layer interconnections is about 20% faster than the conventional one with the single-layer interconnections. A delay time analysis reveals that this speed increase is due to the decrease in interconnection propagation delay.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_7_1080/_p
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@ARTICLE{e82-c_7_1080,
author={Yohtaro UMEDA, Kazuo OSAFUNE, Takatomo ENOKI, Haruki YOKOYAMA, Yasunobu ISHII, },
journal={IEICE TRANSACTIONS on Electronics},
title={49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs},
year={1999},
volume={E82-C},
number={7},
pages={1080-1085},
abstract={49-GHz operation for a state-of-the-art static frequency divider using FETs is achieved with high-performance 0.1-µm-gate InAlAs/InGaAs/InP HEMTs and high-speed double-layer interconnections with a thick low-permittivity BCB inter-layer dielectric film. An experiment shows that the propagation delay for the upper-layer line in the double-layer interconnections is less than half of that for the conventional single-layer interconnections directly on InP-substrate. The frequency divider with the double-layer interconnections is about 20% faster than the conventional one with the single-layer interconnections. A delay time analysis reveals that this speed increase is due to the decrease in interconnection propagation delay.},
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - 49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1080
EP - 1085
AU - Yohtaro UMEDA
AU - Kazuo OSAFUNE
AU - Takatomo ENOKI
AU - Haruki YOKOYAMA
AU - Yasunobu ISHII
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1999
AB - 49-GHz operation for a state-of-the-art static frequency divider using FETs is achieved with high-performance 0.1-µm-gate InAlAs/InGaAs/InP HEMTs and high-speed double-layer interconnections with a thick low-permittivity BCB inter-layer dielectric film. An experiment shows that the propagation delay for the upper-layer line in the double-layer interconnections is less than half of that for the conventional single-layer interconnections directly on InP-substrate. The frequency divider with the double-layer interconnections is about 20% faster than the conventional one with the single-layer interconnections. A delay time analysis reveals that this speed increase is due to the decrease in interconnection propagation delay.
ER -
English
