The current-voltage characteristics of a single electron transistor (SET) in the resonant transport mode are investigated. In the future when SET devices are applied to integrated electronics, the quantum effect will seriously modify their characteristics in ultra-small geometry. The current will be dominated by the resonant transport through narrow energy levels in the dot. The simple case of a two-level system is analyzed and the transport mechanism is clarified. The transport property at low temperatures (higher than the Kondo temperature) in the low tunneling rate limit is discussed, and a current map where current values are classified in the gate bias-drain bias plane is provided. It was shown that the dynamic aspect of electron flow seriously influences the current value.
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Kenji NATORI, Nobuyuki SANO, "A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 9, pp. 1599-1606, September 1999, doi: .
Abstract: The current-voltage characteristics of a single electron transistor (SET) in the resonant transport mode are investigated. In the future when SET devices are applied to integrated electronics, the quantum effect will seriously modify their characteristics in ultra-small geometry. The current will be dominated by the resonant transport through narrow energy levels in the dot. The simple case of a two-level system is analyzed and the transport mechanism is clarified. The transport property at low temperatures (higher than the Kondo temperature) in the low tunneling rate limit is discussed, and a current map where current values are classified in the gate bias-drain bias plane is provided. It was shown that the dynamic aspect of electron flow seriously influences the current value.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_9_1599/_p
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@ARTICLE{e82-c_9_1599,
author={Kenji NATORI, Nobuyuki SANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode},
year={1999},
volume={E82-C},
number={9},
pages={1599-1606},
abstract={The current-voltage characteristics of a single electron transistor (SET) in the resonant transport mode are investigated. In the future when SET devices are applied to integrated electronics, the quantum effect will seriously modify their characteristics in ultra-small geometry. The current will be dominated by the resonant transport through narrow energy levels in the dot. The simple case of a two-level system is analyzed and the transport mechanism is clarified. The transport property at low temperatures (higher than the Kondo temperature) in the low tunneling rate limit is discussed, and a current map where current values are classified in the gate bias-drain bias plane is provided. It was shown that the dynamic aspect of electron flow seriously influences the current value.},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode
T2 - IEICE TRANSACTIONS on Electronics
SP - 1599
EP - 1606
AU - Kenji NATORI
AU - Nobuyuki SANO
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1999
AB - The current-voltage characteristics of a single electron transistor (SET) in the resonant transport mode are investigated. In the future when SET devices are applied to integrated electronics, the quantum effect will seriously modify their characteristics in ultra-small geometry. The current will be dominated by the resonant transport through narrow energy levels in the dot. The simple case of a two-level system is analyzed and the transport mechanism is clarified. The transport property at low temperatures (higher than the Kondo temperature) in the low tunneling rate limit is discussed, and a current map where current values are classified in the gate bias-drain bias plane is provided. It was shown that the dynamic aspect of electron flow seriously influences the current value.
ER -