Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver
Summary :
We compare the numerical results for electron direct tunneling currents for single gate oxides, ON- and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and of the modeling of electron transport in silicon.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.8 pp.1189-1193
- Publication Date
- 2000/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
- Category
- Gate Tunneling Simulation
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Andreas WETTSTEIN, Andreas SCHENK, Wolfgang FICHTNER, "Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1189-1193, August 2000, doi: .
Abstract: We compare the numerical results for electron direct tunneling currents for single gate oxides, ON- and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and of the modeling of electron transport in silicon.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1189/_p
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@ARTICLE{e83-c_8_1189,
author={Andreas WETTSTEIN, Andreas SCHENK, Wolfgang FICHTNER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver},
year={2000},
volume={E83-C},
number={8},
pages={1189-1193},
abstract={We compare the numerical results for electron direct tunneling currents for single gate oxides, ON- and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and of the modeling of electron transport in silicon.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver
T2 - IEICE TRANSACTIONS on Electronics
SP - 1189
EP - 1193
AU - Andreas WETTSTEIN
AU - Andreas SCHENK
AU - Wolfgang FICHTNER
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - We compare the numerical results for electron direct tunneling currents for single gate oxides, ON- and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and of the modeling of electron transport in silicon.
ER -
English
