We have studied the transport property of the Vertical MOSFET (V-MOSFET) with an impurity from the viewpoint of quantum electron dynamics. In order to obtain the position dependence of impurity for the electron transmission property through the channel of the V-MOSFET, we solve the time-dependent Shrodinger equation in real space mesh technique We reveal that the impurity in the source edge can assist the electron transmission from the source to drain working as a wave splitter. In addition, we also reveal the effect of an impurity in the surface of pillar is limited because of its dimensionality. Furthermore, we obtained that the electron injection from the source to the channel becomes difficult due to the energy difference between the subbands of the source and the channel. These results enable us to obtain the guiding principle to design the V-MOSFET in the 10 nm pillar. The results enable us to obtain the guiding principle to design the V-MOSFET beyond 20 nm design rule.

A method has been developed for deriving the approximate global optimum of a nonlinear objective function. First, the objective function is expanded into a linear equation for a moment vector, and the optimization problem is reduced to an eigen analysis problem in the wave coefficient space. Next, the process of the optimization is expressed using a Schrodinger-type equation, so global optimization is equivalent to eigen analysis of the Hamiltonian of a Schrodinger-type equation. Computer simulation of this method demonstrated that it produces a good approximation of the global optimum. An example optimization problem was solved using a Hamiltonian constructed by combining Hamiltonians for other optimization problems, demonstrating that various types of applications can be solved by combining simple Hamiltonians.

We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dynamics. To obtain the intuitive picture of electron transmission property through channel of the V-MOSFET, we solve the time-dependent Schrodinger equation in real space by employing the split operator method. We injected an electron wave packet into the body of the V-MOSFET from the source, and traced the time-development of electron-wave function in the body and drain region. We successfully showed that the electron wave function propagates through the resonant states of the body potential. Our suggested approaches open the quantative and intuitive discussion for the carrier dynamics in the V-MOSFET on quantum limit.

A two-qubit system made of electrons running along coupled pairs of quantum wires is described and numerically analyzed. A brief review of the basic gates is given first, based on preliminary investigations, followed by the description of the electron dynamics. A detailed analysis of a conditional phase shifter is carried out by means of a time-dependent Schrodinger solver applied to a two-particle system. A quantum network suitable for creating entanglement is simulated, and results are shown. The physical structure of the proposed network is within the reach of a solid-state implementation. The physical parameters used in the computations have been chosen with reference to silicon quantum wires embedded in silicon dioxide.

With the emerging technology of photonic networks, careful design becomes necessary to make most of the already installed fibre capacity. Appropriate numerical tools are readily available. Usually, these are based on the split-step Fourier method (SSFM), employing the fast Fourier transform (FFT). With N discretization points, the complexity of the SSFM is O(N log2N). For real-world wavelength division multiplexing (WDM) systems, the simulation time can be of the order of days, so any speed improvement would be most welcome. We show that the SSFM is a special case of the so-called collocation method with harmonic basis functions. However, for modelling nonlinear optical waveguides, various other basis function systems offer significant advantages. For calculating the propagation of single soliton-like impulses, a problem-adapted Gauss-Hermite basis leads to a strongly reduced computation time compared to the SSFM . Further, using a basis function system constructed from a scaling function, which generates a compactly supported wavelet, we developed a new and flexible split-step wavelet collocation method (SSWCM). This technique is independent of the propagating impulse shapes, and provides a complexity of the order O(N) for a fixed accuracy. For a typical modelling situation with up to 64 WDM channels, the SSWCM leads to significantly shorter computation times than the standard SSFM.

Nonlinear behavior of electromagnetic surface waves propagating along a tangentially magnetized ferrite slab is investigated. The nonlinear Schrodinger equation (NLSE) which describes the temporal evolution of the electromagnetic wave pulses has been derived directly from the Maxwell equations and the equation of precessional motion for the magnetization in the ferrite slab with the aid of the reductive perturbation method without magnetostatic approximation. Based on the formula derived, we have numerically evaluated the frequency-dependence of the nonlinear coefficient in the NLSE for both a magnetostatic surface wave mode and a dynamic mode. As a result, we have confirmed the possibility of the propagation of solitons in the waveguide.

We compare the numerical results for electron direct tunneling currents for single gate oxides, ON- and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and of the modeling of electron transport in silicon.