IEICE TRANSACTIONS on Electronics
RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation
Summary :
A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.8 pp.1224-1227
- Publication Date
- 2000/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
- Category
- Device Modeling and Simulation
Authors
KAYAKeyword
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Scott ROY, Sava KAYA, Asen ASENOV, John R. BARKER, "RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1224-1227, August 2000, doi: .
Abstract: A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1224/_p
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@ARTICLE{e83-c_8_1224,
author={Scott ROY, Sava KAYA, Asen ASENOV, John R. BARKER, },
journal={IEICE TRANSACTIONS on Electronics},
title={RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation},
year={2000},
volume={E83-C},
number={8},
pages={1224-1227},
abstract={A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1224
EP - 1227
AU - Scott ROY
AU - Sava KAYA
AU - Asen ASENOV
AU - John R. BARKER
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.
ER -
English
