Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile

Christoph JUNGEMANN; Stefan KEITH; Bernd MEINERZHAGEN

Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile

Christoph JUNGEMANN, Stefan KEITH, Bernd MEINERZHAGEN

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This work presents the first comprehensive full-band Monte Carlo model for the simulation of silicon/silicon-germanium devices with arbitrary germanium profiles. The model includes a new CPU and memory efficient method for the discretization of the Brillouin zone based on adaptive nonuniform tetrahedral grids and a very efficient method for transfers through heterointerfaces in the case of irregular -space grids. The feasibility of the FB-MC simulation is demonstrated by application to an industrial HBT with a graded germanium profile and different aspects of the microscopic carrier transport are discussed. Internal distributions of the transistor are calculated with a very low noise level and high efficiency allowing a detailed investigation of the device behavior.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.8 pp.1228-1234

Publication Date: 2000/08/25

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Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))

Category: Device Modeling and Simulation

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Christoph JUNGEMANN, Stefan KEITH, Bernd MEINERZHAGEN, "Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 8, pp. 1228-1234, August 2000, doi: .
Abstract: This work presents the first comprehensive full-band Monte Carlo model for the simulation of silicon/silicon-germanium devices with arbitrary germanium profiles. The model includes a new CPU and memory efficient method for the discretization of the Brillouin zone based on adaptive nonuniform tetrahedral grids and a very efficient method for transfers through heterointerfaces in the case of irregular -space grids. The feasibility of the FB-MC simulation is demonstrated by application to an industrial HBT with a graded germanium profile and different aspects of the microscopic carrier transport are discussed. Internal distributions of the transistor are calculated with a very low noise level and high efficiency allowing a detailed investigation of the device behavior.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1228/_p

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@ARTICLE{e83-c_8_1228,
author={Christoph JUNGEMANN, Stefan KEITH, Bernd MEINERZHAGEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile},
year={2000},
volume={E83-C},
number={8},
pages={1228-1234},
abstract={This work presents the first comprehensive full-band Monte Carlo model for the simulation of silicon/silicon-germanium devices with arbitrary germanium profiles. The model includes a new CPU and memory efficient method for the discretization of the Brillouin zone based on adaptive nonuniform tetrahedral grids and a very efficient method for transfers through heterointerfaces in the case of irregular -space grids. The feasibility of the FB-MC simulation is demonstrated by application to an industrial HBT with a graded germanium profile and different aspects of the microscopic carrier transport are discussed. Internal distributions of the transistor are calculated with a very low noise level and high efficiency allowing a detailed investigation of the device behavior.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile
T2 - IEICE TRANSACTIONS on Electronics
SP - 1228
EP - 1234
AU - Christoph JUNGEMANN
AU - Stefan KEITH
AU - Bernd MEINERZHAGEN
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - This work presents the first comprehensive full-band Monte Carlo model for the simulation of silicon/silicon-germanium devices with arbitrary germanium profiles. The model includes a new CPU and memory efficient method for the discretization of the Brillouin zone based on adaptive nonuniform tetrahedral grids and a very efficient method for transfers through heterointerfaces in the case of irregular -space grids. The feasibility of the FB-MC simulation is demonstrated by application to an industrial HBT with a graded germanium profile and different aspects of the microscopic carrier transport are discussed. Internal distributions of the transistor are calculated with a very low noise level and high efficiency allowing a detailed investigation of the device behavior.
ER -