IEICE TRANSACTIONS on Electronics
Device Linearity and Gate Voltage Swing Improvement by Al0.3Ga0.7As/In0.15Ga0.85As Double Doped-Channel Design
Summary :
Devices DC, RF, and microwave power performances between Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel FET (D-DCFETs), conventional doped-channel FETs (DCFETs) and HEMTs are compared with each other. Device linearity and power performance have been improved by a double doped-channel design. The D-DCFETs provides a higher current density, higher gate breakdown voltage, and improves gate operation bias range as well as frequency performance. The linear power gain and output power for D-DCFETs is 19 dB and 305 mW/mm with a power-added efficiency of 52% at Vds = 2.5 V under a 1.9 GHz operation. These advantages suggest that double doped-channel design is more suitable for a high linearity and high microwave power device applications.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1306-1311
- Publication Date
- 2001/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
- Category
- Hetero-FETs & Their Integrated Circuits
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Feng-Tso CHIEN, Hsien-Chin CHIU, Shih-Cheng YANG, Chii-Wen CHEN, Yi-Jen CHAN, "Device Linearity and Gate Voltage Swing Improvement by Al0.3Ga0.7As/In0.15Ga0.85As Double Doped-Channel Design" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1306-1311, October 2001, doi: .
Abstract: Devices DC, RF, and microwave power performances between Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel FET (D-DCFETs), conventional doped-channel FETs (DCFETs) and HEMTs are compared with each other. Device linearity and power performance have been improved by a double doped-channel design. The D-DCFETs provides a higher current density, higher gate breakdown voltage, and improves gate operation bias range as well as frequency performance. The linear power gain and output power for D-DCFETs is 19 dB and 305 mW/mm with a power-added efficiency of 52% at Vds = 2.5 V under a 1.9 GHz operation. These advantages suggest that double doped-channel design is more suitable for a high linearity and high microwave power device applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1306/_p
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@ARTICLE{e84-c_10_1306,
author={Feng-Tso CHIEN, Hsien-Chin CHIU, Shih-Cheng YANG, Chii-Wen CHEN, Yi-Jen CHAN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Device Linearity and Gate Voltage Swing Improvement by Al0.3Ga0.7As/In0.15Ga0.85As Double Doped-Channel Design},
year={2001},
volume={E84-C},
number={10},
pages={1306-1311},
abstract={Devices DC, RF, and microwave power performances between Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel FET (D-DCFETs), conventional doped-channel FETs (DCFETs) and HEMTs are compared with each other. Device linearity and power performance have been improved by a double doped-channel design. The D-DCFETs provides a higher current density, higher gate breakdown voltage, and improves gate operation bias range as well as frequency performance. The linear power gain and output power for D-DCFETs is 19 dB and 305 mW/mm with a power-added efficiency of 52% at Vds = 2.5 V under a 1.9 GHz operation. These advantages suggest that double doped-channel design is more suitable for a high linearity and high microwave power device applications.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Device Linearity and Gate Voltage Swing Improvement by Al0.3Ga0.7As/In0.15Ga0.85As Double Doped-Channel Design
T2 - IEICE TRANSACTIONS on Electronics
SP - 1306
EP - 1311
AU - Feng-Tso CHIEN
AU - Hsien-Chin CHIU
AU - Shih-Cheng YANG
AU - Chii-Wen CHEN
AU - Yi-Jen CHAN
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - Devices DC, RF, and microwave power performances between Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel FET (D-DCFETs), conventional doped-channel FETs (DCFETs) and HEMTs are compared with each other. Device linearity and power performance have been improved by a double doped-channel design. The D-DCFETs provides a higher current density, higher gate breakdown voltage, and improves gate operation bias range as well as frequency performance. The linear power gain and output power for D-DCFETs is 19 dB and 305 mW/mm with a power-added efficiency of 52% at Vds = 2.5 V under a 1.9 GHz operation. These advantages suggest that double doped-channel design is more suitable for a high linearity and high microwave power device applications.
ER -
English
