We report 0.15-µm T-shaped gate MODFETs using BCB (Benzocyclobutene) as low-k spacer dielectric material. The RF performance of pseudomorphic MODFET was improved by reducing the gate fringing capacitance using low-k material. The BCB film was deposited by plasma CVD technique at 100
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Yoshiharu ANDA, Katsuhiko KAWASHIMA, Mitsuru NISHITSUJI, Tsuyoshi TANAKA, "0.15-µm T-Shaped Gate MODFETs Using BCB as Low-k Spacer" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1323-1327, October 2001, doi: .
Abstract: We report 0.15-µm T-shaped gate MODFETs using BCB (Benzocyclobutene) as low-k spacer dielectric material. The RF performance of pseudomorphic MODFET was improved by reducing the gate fringing capacitance using low-k material. The BCB film was deposited by plasma CVD technique at 100
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1323/_p
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@ARTICLE{e84-c_10_1323,
author={Yoshiharu ANDA, Katsuhiko KAWASHIMA, Mitsuru NISHITSUJI, Tsuyoshi TANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={0.15-µm T-Shaped Gate MODFETs Using BCB as Low-k Spacer},
year={2001},
volume={E84-C},
number={10},
pages={1323-1327},
abstract={We report 0.15-µm T-shaped gate MODFETs using BCB (Benzocyclobutene) as low-k spacer dielectric material. The RF performance of pseudomorphic MODFET was improved by reducing the gate fringing capacitance using low-k material. The BCB film was deposited by plasma CVD technique at 100
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - 0.15-µm T-Shaped Gate MODFETs Using BCB as Low-k Spacer
T2 - IEICE TRANSACTIONS on Electronics
SP - 1323
EP - 1327
AU - Yoshiharu ANDA
AU - Katsuhiko KAWASHIMA
AU - Mitsuru NISHITSUJI
AU - Tsuyoshi TANAKA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - We report 0.15-µm T-shaped gate MODFETs using BCB (Benzocyclobutene) as low-k spacer dielectric material. The RF performance of pseudomorphic MODFET was improved by reducing the gate fringing capacitance using low-k material. The BCB film was deposited by plasma CVD technique at 100
ER -