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IEICE TRANSACTIONS on Electronics

InP DHBT with 0.5 µ m Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter

Toshiki ARAI, Shigeharu YAMAGAMI, Yoshifumi OKUDA, Yoshimichi HARADA, Yasuyuki MIYAMOTO, Kazuhito FURUYA

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Summary :

Fabrication process for narrow emitter along 010 direction in heterojunction bipolar transistor fully drawn by electron beam lithography was studied. Emitter structure of a 100 nm width was formed by using epitaxial structure with 30-nm-thick InP layer of emitter. Transistor operation of devices with 0.5-µ m-wide emitter was confirmed. This process can be applied to a buried metal heterojunction bipolar transistor (BM-HBT) with narrow emitter, resulting in high-speed operation of BM-HBT.

Publication
IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1394-1398
Publication Date
2001/10/01
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category
III-V HBTs

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