VCSEL output light polarization was controlled by fabricating devices on (311) substrate. Stability was improved by introducing compressive strain to the quantum wells in the active layer. In experiments, the power penalty due to polarization-dependent loss in the transmission line was negligible for both VCSELs with unstrained and strained quantum well active layers on (311)B substrate. The sensitivity at 2.5 Gbps was improved in a device with a strained active layer because the intensity noise due to the polarization instability was reduced. These characteristics are discussed and compared to calculated results.
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Toshiaki KAGAWA, Osamu TADANAGA, Hiroyuki UENOHARA, Kouta TATENO, Chikara AMANO, "Polarization Control of VCSEL on (311)B Substrate and Its Effects on Transmission Characteristics" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 3, pp. 351-357, March 2001, doi: .
Abstract: VCSEL output light polarization was controlled by fabricating devices on (311) substrate. Stability was improved by introducing compressive strain to the quantum wells in the active layer. In experiments, the power penalty due to polarization-dependent loss in the transmission line was negligible for both VCSELs with unstrained and strained quantum well active layers on (311)B substrate. The sensitivity at 2.5 Gbps was improved in a device with a strained active layer because the intensity noise due to the polarization instability was reduced. These characteristics are discussed and compared to calculated results.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_3_351/_p
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@ARTICLE{e84-c_3_351,
author={Toshiaki KAGAWA, Osamu TADANAGA, Hiroyuki UENOHARA, Kouta TATENO, Chikara AMANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Polarization Control of VCSEL on (311)B Substrate and Its Effects on Transmission Characteristics},
year={2001},
volume={E84-C},
number={3},
pages={351-357},
abstract={VCSEL output light polarization was controlled by fabricating devices on (311) substrate. Stability was improved by introducing compressive strain to the quantum wells in the active layer. In experiments, the power penalty due to polarization-dependent loss in the transmission line was negligible for both VCSELs with unstrained and strained quantum well active layers on (311)B substrate. The sensitivity at 2.5 Gbps was improved in a device with a strained active layer because the intensity noise due to the polarization instability was reduced. These characteristics are discussed and compared to calculated results.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - Polarization Control of VCSEL on (311)B Substrate and Its Effects on Transmission Characteristics
T2 - IEICE TRANSACTIONS on Electronics
SP - 351
EP - 357
AU - Toshiaki KAGAWA
AU - Osamu TADANAGA
AU - Hiroyuki UENOHARA
AU - Kouta TATENO
AU - Chikara AMANO
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2001
AB - VCSEL output light polarization was controlled by fabricating devices on (311) substrate. Stability was improved by introducing compressive strain to the quantum wells in the active layer. In experiments, the power penalty due to polarization-dependent loss in the transmission line was negligible for both VCSELs with unstrained and strained quantum well active layers on (311)B substrate. The sensitivity at 2.5 Gbps was improved in a device with a strained active layer because the intensity noise due to the polarization instability was reduced. These characteristics are discussed and compared to calculated results.
ER -