Area-Efficient Multi-Port SRAMs for On-Chip Data-Storage with High Random-Access Bandwidth and Large Storage Capacity

Hans Jurgen MATTAUSCH; Koji KISHI; Takayuki GYOHTEN

Area-Efficient Multi-Port SRAMs for On-Chip Data-Storage with High Random-Access Bandwidth and Large Storage Capacity

Hans Jurgen MATTAUSCH, Koji KISHI, Takayuki GYOHTEN

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The recent trend towards highly parallel on-chip data processing, as e.g. in single-chip processors with parallel execution capability of multiple instructions, leads to the requirement of on-chip data storage with high random-access bandwidth, parallel access capability and large capacity. The first two requirements call for the application of multi-ported memories. However, the conventional architecture, based on multi-port storage cells for each bit, cannot efficiently realize the large storage capacity, because cell area explodes due to a quadratic increase with port number (N). A promising method for obtaining area efficiency is to increase the size of the smallest unit with N-port capability, e.g. by introducing N-port capability on the level of blocks of 1-port cells and not for each cell. We report a quantitative analysis of this method for the SRAM case, which is based on design data in a 0.5 µm, 2-metal CMOS technology. Achievable area-reduction magnitudes in comparison to the conventional architecture are found to be enormous and to accelerate as a function of N. Reduction factors to areas < 1/2, < 1/5, < 1/14 and < 1/30 are estimated for 4, 8, 16 and 32 ports, respectively. Since the demerit of the proposed approach is an increased access-rejection probability, a trade-off between area reduction and allowable access-rejection probability is always necessary for practical applications. This is discussed for the application of multi-port cache memories.

Publication: IEICE TRANSACTIONS on Electronics Vol.E84-C No.3 pp.410-417

Publication Date: 2001/03/01

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Type of Manuscript: PAPER

Category: Integrated Electronics

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Hans Jurgen MATTAUSCH, Koji KISHI, Takayuki GYOHTEN, "Area-Efficient Multi-Port SRAMs for On-Chip Data-Storage with High Random-Access Bandwidth and Large Storage Capacity" in IEICE TRANSACTIONS on Electronics, vol. E84-C, no. 3, pp. 410-417, March 2001, doi: .
Abstract: The recent trend towards highly parallel on-chip data processing, as e.g. in single-chip processors with parallel execution capability of multiple instructions, leads to the requirement of on-chip data storage with high random-access bandwidth, parallel access capability and large capacity. The first two requirements call for the application of multi-ported memories. However, the conventional architecture, based on multi-port storage cells for each bit, cannot efficiently realize the large storage capacity, because cell area explodes due to a quadratic increase with port number (N). A promising method for obtaining area efficiency is to increase the size of the smallest unit with N-port capability, e.g. by introducing N-port capability on the level of blocks of 1-port cells and not for each cell. We report a quantitative analysis of this method for the SRAM case, which is based on design data in a 0.5 µm, 2-metal CMOS technology. Achievable area-reduction magnitudes in comparison to the conventional architecture are found to be enormous and to accelerate as a function of N. Reduction factors to areas < 1/2, < 1/5, < 1/14 and < 1/30 are estimated for 4, 8, 16 and 32 ports, respectively. Since the demerit of the proposed approach is an increased access-rejection probability, a trade-off between area reduction and allowable access-rejection probability is always necessary for practical applications. This is discussed for the application of multi-port cache memories.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_3_410/_p

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@ARTICLE{e84-c_3_410,
author={Hans Jurgen MATTAUSCH, Koji KISHI, Takayuki GYOHTEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Area-Efficient Multi-Port SRAMs for On-Chip Data-Storage with High Random-Access Bandwidth and Large Storage Capacity},
year={2001},
volume={E84-C},
number={3},
pages={410-417},
abstract={The recent trend towards highly parallel on-chip data processing, as e.g. in single-chip processors with parallel execution capability of multiple instructions, leads to the requirement of on-chip data storage with high random-access bandwidth, parallel access capability and large capacity. The first two requirements call for the application of multi-ported memories. However, the conventional architecture, based on multi-port storage cells for each bit, cannot efficiently realize the large storage capacity, because cell area explodes due to a quadratic increase with port number (N). A promising method for obtaining area efficiency is to increase the size of the smallest unit with N-port capability, e.g. by introducing N-port capability on the level of blocks of 1-port cells and not for each cell. We report a quantitative analysis of this method for the SRAM case, which is based on design data in a 0.5 µm, 2-metal CMOS technology. Achievable area-reduction magnitudes in comparison to the conventional architecture are found to be enormous and to accelerate as a function of N. Reduction factors to areas < 1/2, < 1/5, < 1/14 and < 1/30 are estimated for 4, 8, 16 and 32 ports, respectively. Since the demerit of the proposed approach is an increased access-rejection probability, a trade-off between area reduction and allowable access-rejection probability is always necessary for practical applications. This is discussed for the application of multi-port cache memories.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Area-Efficient Multi-Port SRAMs for On-Chip Data-Storage with High Random-Access Bandwidth and Large Storage Capacity
T2 - IEICE TRANSACTIONS on Electronics
SP - 410
EP - 417
AU - Hans Jurgen MATTAUSCH
AU - Koji KISHI
AU - Takayuki GYOHTEN
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2001
AB - The recent trend towards highly parallel on-chip data processing, as e.g. in single-chip processors with parallel execution capability of multiple instructions, leads to the requirement of on-chip data storage with high random-access bandwidth, parallel access capability and large capacity. The first two requirements call for the application of multi-ported memories. However, the conventional architecture, based on multi-port storage cells for each bit, cannot efficiently realize the large storage capacity, because cell area explodes due to a quadratic increase with port number (N). A promising method for obtaining area efficiency is to increase the size of the smallest unit with N-port capability, e.g. by introducing N-port capability on the level of blocks of 1-port cells and not for each cell. We report a quantitative analysis of this method for the SRAM case, which is based on design data in a 0.5 µm, 2-metal CMOS technology. Achievable area-reduction magnitudes in comparison to the conventional architecture are found to be enormous and to accelerate as a function of N. Reduction factors to areas < 1/2, < 1/5, < 1/14 and < 1/30 are estimated for 4, 8, 16 and 32 ports, respectively. Since the demerit of the proposed approach is an increased access-rejection probability, a trade-off between area reduction and allowable access-rejection probability is always necessary for practical applications. This is discussed for the application of multi-port cache memories.
ER -