This paper presents an integration architecture of content addressable memory (CAM) and a massive-parallel memory-embedded SIMD matrix for constructing a versatile multimedia processor. The massive-parallel memory-embedded SIMD matrix has 2,048 2-bit processing elements, which are connected by a flexible switching network, and supports 2-bit 2,048-way bit-serial and word-parallel operations with a single command. The SIMD matrix architecture is verified to be a better way for processing the repeated arithmetic operation types in multimedia applications. The proposed architecture, reported in this paper, exploits in addition CAM technology and enables therefore fast pipelined table-lookup coding operations. Since both arithmetic and table-lookup operations execute extremely fast, the proposed novel architecture can realize consequently efficient and versatile multimedia data processing. Evaluation results of the proposed CAM-enhanced massive-parallel SIMD matrix processor for the example of the frequently used JPEG image-compression application show that the necessary clock cycle number can be reduced by 86% in comparison to a conventional mobile DSP architecture. The determined performances in Mpixel/mm2 are factors 3.3 and 4.4 better than with a CAM-less massive-parallel memory-embedded SIMD matrix processor and a conventional mobile DSP, respectively.

We propose a novel capacitorless twin-transistor random access memory (TTRAM). The 2 Mb test device has been fabricated on 130 nm SOI-CMOS process. We demonstrate the TTRAM cell has two data-storage states and confirm the data retention time of 100 ms at 80. TTRAM process is compatible with the conventional SOI-CMOS and never requires any additional processes. A 6.1 ns row-access time is achieved and 250 MHz operation can be realized by using 2 bank 8 b-burst mode.

Adaptive voltage management (AVM) scheme is proposed for worst-caseless lower voltage SoC design. The AVM scheme detects the temperature accurately by using two oscillators with different temperature characteristics, and sets supply voltage most suitable with a table look-up method corresponding to the process variation. Also, the AVM can supply the stable voltage with a local shift type regulator even at lower voltage. Thereby, this supply-voltage control system considering PVT variations can control the internal voltage corresponding to process and temperature variations and can realize a wide-operating-margin, DFM function for low voltage SoC. The experimental chip is fabricated on a 90 nm CMOS process, and it was confirmed that the proposed architecture controls the voltage accurately and has a wide operating margin at a lower voltage.

The recent trend towards highly parallel on-chip data processing, as e.g. in single-chip processors with parallel execution capability of multiple instructions, leads to the requirement of on-chip data storage with high random-access bandwidth, parallel access capability and large capacity. The first two requirements call for the application of multi-ported memories. However, the conventional architecture, based on multi-port storage cells for each bit, cannot efficiently realize the large storage capacity, because cell area explodes due to a quadratic increase with port number (N). A promising method for obtaining area efficiency is to increase the size of the smallest unit with N-port capability, e.g. by introducing N-port capability on the level of blocks of 1-port cells and not for each cell. We report a quantitative analysis of this method for the SRAM case, which is based on design data in a 0.5 µm, 2-metal CMOS technology. Achievable area-reduction magnitudes in comparison to the conventional architecture are found to be enormous and to accelerate as a function of N. Reduction factors to areas < 1/2, < 1/5, < 1/14 and < 1/30 are estimated for 4, 8, 16 and 32 ports, respectively. Since the demerit of the proposed approach is an increased access-rejection probability, a trade-off between area reduction and allowable access-rejection probability is always necessary for practical applications. This is discussed for the application of multi-port cache memories.