IEICE TRANSACTIONS on Electronics
Low Cost CMOS On-Chip and Remote Temperature Sensors
Summary :
This paper describes the design and results of low cost integrated CMOS local and remote temperature sensors with digital outputs. No trimming is needed to obtain good temperature linearity, so that only one-temperature calibration is needed which greatly reduces testing cost. The base-emitter voltage of the parasitic substrate bipolar transistor is used to measure the local temperature. A diode-connected external bipolar transistor is used to measure the remote temperature. Chopper techniques were used to cancel the offset voltage of the op-amp, so that a precise bandgap voltage can be obtained without resistance trimming. A first order ΣΔ ADC was used to produce the digital output. The local and remote temperature sensors were realized in a 0.6 µm single-poly triple-metal CMOS technology with active area of 0.6 mm2 and 0.65 mm2, respectively. After calibration, the error is
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.4 pp.451-459
- Publication Date
- 2001/04/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Integrated Electronics
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Ming-Chan WENG, Jiin-Chuan WU, "Low Cost CMOS On-Chip and Remote Temperature Sensors" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 4, pp. 451-459, April 2001, doi: .
Abstract: This paper describes the design and results of low cost integrated CMOS local and remote temperature sensors with digital outputs. No trimming is needed to obtain good temperature linearity, so that only one-temperature calibration is needed which greatly reduces testing cost. The base-emitter voltage of the parasitic substrate bipolar transistor is used to measure the local temperature. A diode-connected external bipolar transistor is used to measure the remote temperature. Chopper techniques were used to cancel the offset voltage of the op-amp, so that a precise bandgap voltage can be obtained without resistance trimming. A first order ΣΔ ADC was used to produce the digital output. The local and remote temperature sensors were realized in a 0.6 µm single-poly triple-metal CMOS technology with active area of 0.6 mm2 and 0.65 mm2, respectively. After calibration, the error is
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_4_451/_p
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@ARTICLE{e84-c_4_451,
author={Ming-Chan WENG, Jiin-Chuan WU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Cost CMOS On-Chip and Remote Temperature Sensors},
year={2001},
volume={E84-C},
number={4},
pages={451-459},
abstract={This paper describes the design and results of low cost integrated CMOS local and remote temperature sensors with digital outputs. No trimming is needed to obtain good temperature linearity, so that only one-temperature calibration is needed which greatly reduces testing cost. The base-emitter voltage of the parasitic substrate bipolar transistor is used to measure the local temperature. A diode-connected external bipolar transistor is used to measure the remote temperature. Chopper techniques were used to cancel the offset voltage of the op-amp, so that a precise bandgap voltage can be obtained without resistance trimming. A first order ΣΔ ADC was used to produce the digital output. The local and remote temperature sensors were realized in a 0.6 µm single-poly triple-metal CMOS technology with active area of 0.6 mm2 and 0.65 mm2, respectively. After calibration, the error is
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Low Cost CMOS On-Chip and Remote Temperature Sensors
T2 - IEICE TRANSACTIONS on Electronics
SP - 451
EP - 459
AU - Ming-Chan WENG
AU - Jiin-Chuan WU
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2001
AB - This paper describes the design and results of low cost integrated CMOS local and remote temperature sensors with digital outputs. No trimming is needed to obtain good temperature linearity, so that only one-temperature calibration is needed which greatly reduces testing cost. The base-emitter voltage of the parasitic substrate bipolar transistor is used to measure the local temperature. A diode-connected external bipolar transistor is used to measure the remote temperature. Chopper techniques were used to cancel the offset voltage of the op-amp, so that a precise bandgap voltage can be obtained without resistance trimming. A first order ΣΔ ADC was used to produce the digital output. The local and remote temperature sensors were realized in a 0.6 µm single-poly triple-metal CMOS technology with active area of 0.6 mm2 and 0.65 mm2, respectively. After calibration, the error is
ER -
English
