Temperature Dependence of Gain Characteristics in 1.3-µm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers
Summary :
We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.5 pp.648-655
- Publication Date
- 2001/05/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Category
- Optical Active Devices and Modules
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Toshio HIGASHI, Tsuyoshi YAMAMOTO, Tsutomu ISHIKAWA, Takuya FUJII, Haruhisa SODA, Minoru YAMADA, "Temperature Dependence of Gain Characteristics in 1.3-µm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 5, pp. 648-655, May 2001, doi: .
Abstract: We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_5_648/_p
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@ARTICLE{e84-c_5_648,
author={Toshio HIGASHI, Tsuyoshi YAMAMOTO, Tsutomu ISHIKAWA, Takuya FUJII, Haruhisa SODA, Minoru YAMADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Temperature Dependence of Gain Characteristics in 1.3-µm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers},
year={2001},
volume={E84-C},
number={5},
pages={648-655},
abstract={We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.},
keywords={},
doi={},
ISSN={},
month={May},}
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TY - JOUR
TI - Temperature Dependence of Gain Characteristics in 1.3-µm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers
T2 - IEICE TRANSACTIONS on Electronics
SP - 648
EP - 655
AU - Toshio HIGASHI
AU - Tsuyoshi YAMAMOTO
AU - Tsutomu ISHIKAWA
AU - Takuya FUJII
AU - Haruhisa SODA
AU - Minoru YAMADA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2001
AB - We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.
ER -
English
