Frequency chirp of a semiconductor laser is controlled by using hybrid modulation, which simultaneously modulates intra-cavity loss and injection current to the laser. The positive adiabatic chirp of injection-current modulation is compensated with the negative adiabatic chirp created by intra-cavity-loss modulation, which enhances the chromatic-dispersion tolerance of the laser. A proof-of-concept transmission experiment confirmed that the hybrid modulation laser has a larger dispersion tolerance than conventional directly modulated lasers due to the negative frequency chirp originating from intra-cavity-loss modulation.

In this study, our recent research activities on nanophotonic devices with semiconductor quantum nanostructures are reviewed. We have developed a technique for nanofabricating of high-quality and high-density semiconductor quantum dots (QDs). On the basis of this core technology, we have studied next-generation nanophotonic devices fabricated using high-quality QDs, including (1) a high-performance QD laser for long-wavelength optical communications, (2) high-efficiency compound-type solar cell structures, and (3) single-QD devices for future applications related to quantum information. These devices are expected to be used in high-speed optical communication systems, high-performance renewable energy systems, and future high-security quantum computation and communication systems.

Recent small cube satellites use higher frequency bands such as Ku-band for higher throughput communications. This requires high-frequency link in an earth radio station as well. As one of the solutions, we propose usage of bidirectional radio-on-fiber link employing a wavelength multiplexing scheme. It was numerically shown that the response linearity of the electro-absorption modulator integrated laser (EML) is sufficient and that the spurious emissions are lower enough or can be reduced by the radio-frequency filters. From the frequency response and the single-sideband phase noise measurements, the EML was proved to be used in a radio-on-fiber system of the cube satellite earth station.

Laser diode capable of high speed direct modulation is one of the key solution for short distance applications due to their low power consumption, low cost and small size features. Realization of high modulation bandwidth for direct modulated laser maintaining the above mentioned feature is needed to enhance the short distance, low cost data transmission. One promising approach to enhance the modulation speed is to increase the photon density to achieve high modulation bandwidth. So to achieve this target, 1.55 $mu$m InGaAsP/InGaAsP multiple quantum well (MQW) asymmetric active multimode interferometer laser diode (active MMI-LD) has been demonstrated [1]. The split pumping concept has been applied for the active MMI-LD and significant enhancement of electrical to optical 3 dB down frequency bandwidth (f$_{mathrm{3dB}})$ up to 8 GHz has been successfully confirmed. The reported high bandwidth for split pump active MMI-LD is around 3.5 times higher than the previously reported maximum 3 dB bandwidth (2.3 GHz) of active MMI-LD without split pumping section. That shows, the splitted multimode pumping section behind the electrically isolated modulation section can potentially improve the modulation bandwidth of active MMI-LD. Clear and open eye diagram had also been confirmed for 2.5 Gbps, (2$^{mathrm{7}}$-1) pseudo random bit sequence (PRBS) modulation.

3 dB bandwidth enhancement of single mode semiconductor lasers is confirmed numerically and experimentally when they are operated by intensity modulated signal light injection. 3 dB bandwidth is enlarged to 2.5 times of resonant frequency. The numerical analysis of rate equations predicts that the bandwidth enhancement is accomplished by the modal gain control of semiconductor lasers with injected intensity modulated signal light through non-linear gain coefficient term.

Reduction of the intensity noise in semiconductor lasers is an important subject for the higher performance of an application. Simultaneous usage of the superposition of high frequency current and the electric negative feedback loop was proposed to suppress the noise for the higher power operation of semiconductor lasers. Effective noise reduction of more than 25 dB with 80 mW operation was experimentally demonstrated.

A dual-core spot size converter (DC-SSC) is integrated with a lateral grating assisted lateral co-directional coupler (LGLC) tunable laser by using no additional complicated fabrication processes. The excess loss due to the DC-SSC is only 0.5 dB, and narrow full width half maximums (FWHMs) of vertical and horizontal far-field patterns (FFPs) produced by the laser are about 25° and 20°. This integration causes no degradations of the performance of the LGLC laser; in other words, it maintains good lasing characteristics, namely, wide tuning range of over 68 nm and SMSR of over 35 dB in the C-band under a 50 semi-cooled condition.

Passive optical network topology has been widely adopted in access networks due to its low-cost and yet flexible network structure. To further promote the passive optical networks, the cost reduction of optical modules is critical. Relatively expensive combination of a conventional index-coupled distributed feedback laser diode (IC-DFB-LD) and an optical isolator is commonly used for passive optical networks with transmission distance more than 30 km. Although gain-coupled DFB-LDs (GC-DFB-LD) have been widely investigated in the hope of eliminating the isolator in optical modules, their limited output power keeps them from practical use in passive optical networks. In this paper, we describe the development of 1.31 µm and 1.49 µm GC-DFB-LDs with high output power and optical feed back tolerance for isolator-free optical modules in access networks. The relative intensity noise (RIN) degradation was well suppressed below -120 dB/Hz at -8 dB optical feedback in the temperatures range from 0 to 85 from both 1.31 µm and 1.49 µm GC-DFB-LDs. Optical feedback tolerance of 1.31 µm and 1.49 µm GC-DFB-LDs were improved by more than 6 dB and 4 dB as compared with conventional IC-DFB-LDs. Dispersion power penalty after over 30 km transmission at 1.25 Gbps were achieved less than 0.3 dB and 0.7 dB under -15 dB optical feedback conditions. The proposed 1.31 µm GC-DFB-LD prototypes experimentally demonstrated 14 mW output power with over 5,000-hour operation at 85. Our devices are found to fully complying IEEE 802.3ah standard and seem to be promising for the low-cost optical modules in long-reach access network applications. The details of the device structure as well as transmission experiments are also reported.

We have developed InGaAs-based VCSELs operating around 1.1 µm for high-speed optical interconnections. By applying GaAsP barrier layers, temperature characteristics were considerably improved compared to GaAs barrier layers. As a result, 25 Gbps 100 error-free operation was achieved. These devices also exhibited high reliability. No degradation was observed over 3,000 hours under operation temperature of 150 and current density of 19 kA/cm2. We also developed VCSELs with tunnel junctions for higher speed operation. High modulation bandwidth of 24 GHz and a relaxation oscillation frequency of 27 GHz were achieved. 40 Gbps error-free operation was also demonstrated.

In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This paper provides a solution to solve the cost/yield issue for conventional BH (buried hetero-structure) type laser and performance issue for conventional ridge type laser.

We report the generation of time- and wavelength-interleaved optical pulses using the principle of sub-harmonic pulse gating in a dispersion-managed fiber cavity. The pulsed source has been applied to the processing of electrical and optical signals including analog-to-digital conversion, wavelength multicast, and serial-to-parallel optical data conversion.

Three distortion reduction filters for radio-on-fiber systems are proposed and evaluated from the standpoint of improvements in in-band third order intermodulation (IM3) components (spurious components), insertion loss, temperature stability and so on. The basic filter configuration includes optical comb filter, RF (radiowave frequency) comb filter, and RF dual band rejection filter (DBRF). Experiments are conducted at 2 GHz band for frequency separation Δf=5 MHz and 100 MHz in the temperature range of -10 to +50. These filters can reduce IM3 components even in the saturation region, unlike conventional linearizers. An optical comb filter can reduce IM3 components more than 20 dB and noise level around 10 dB if its polarization controller is properly adjusted, but its insertion loss is large and stability against vibration is very poor. The proposed RF comb filter and RF-DBRF can reduce IM3 components by more than 20 dB and noise level by more than 3 dB. Their stability against vibration and temperature change is good, and insertion losses are 1-2 dB for Δf=100 MHz.

Reduction of the intensity noise in semiconductor lasers is important subject to extend application range of the device. Blue-violet InGaN laser reveals high quantum noise when the laser is operated with low output power. The authors proposed a new scheme of noise reduction both for the optical feedback noise and the quantum noise by applying electric feedback which is positive type at a high frequency and negative type for lower frequency range. Noise reduction effect down to a level lower than the quantum noise was experimentally confirmed even under the optical feedback.

Intensity-noise characteristics of stable multi-mode Fabry-Perot semiconductor lasers are analyzed experimentally and theoretically. Mode-partition noise caused by optical filtering and propagation through optical fibers is investigated by evaluating the relative intensity noise and signal-to-noise ratio. The experimental results indicate that the simplified two-mode analysis provides a good approximation. Suppression of the mode-partition noise by nonlinear gain is experimentally confirmed.

Free-standing 2D slab photonic band-edge lasers based on square lattice and triangular lattice are realized by optical pumping at room-temperature. Both in-plane-emission and surface-emission photonic band-edge lasers are observed and compared. Analyses on optical loss mechanisms for finite-size photonic band-edge lasers are also discussed.

We discuss photonic crystals (PhCs) with advanced micro/nano-structres which are semiconductor quantum dots (QDs) and micro electro-mechanical systems (MEMS) for the purpose of realizing novel classes of PhC devices in future photonic network system. After brief introduction on advantages to implement QDs and MEMS with PhCs, we discuss optical characterization of PhC microcavity containing self-assembled InAs QDs. Modification of emission spectrum of a QD ensemble due to the resonant cavity modes is demonstrated. We also point out the feasibility of low-threshold PhC lasers with QD active media in numerical analysis. A very low threshold current of 10 µA is numerically obtained for lasing action in the multi dimensional distributed feedback mode by using realistic material parameters. Then, the basic concept for MEMS-controlled PhC slab devices is described. We show numerical results that demonstrate some of interesting functions such as the intensity modulation and the tuning of resonant frequency of cavity mode. Finally, a preliminary experiment of MEMS-based switching operation in a PhC line-defect waveguide is demonstrated.

A new technique for optical generation of high-purity millimeter-wave (mm-wave) signals--namely, by synthesizing the outputs from cascadingly phase-locked multiple semiconductor lasers--was developed. Firstly, a high-spectral-purity mm-wave signal was optically generated by heterodyning the outputs from two phase-locked external-cavity semiconductor lasers. The beat signal was detected by a p-i-n photodiode whose output was directly coupled to a coax-waveguide converter followed by a W-band harmonic mixer. By constructing an optical phase-locked loop (OPLL), a high-spectral-purity mm-wave signal with an electrical power of 2.3 µW was successfully generated at 110 GHz with an rms phase fluctuation of 57 mrad. Secondly, the frequency of the mm-wave signal was extended by use of three cascadingly phase-locked semiconductor lasers. This technique uses a semiconductor optical amplifier (SOA) to generate four-wave-mixing (FWM) signals as well as to amplify the input signals. When the three lasers were appropriately tuned, two pairs of FWM signals were nearly degenerated. By phase-locking the offset frequency in one of the nearly degenerated pairs, the frequency separations among the three lasers were kept at a ratio of 1:2. Thus, we successfully generated high-purity millimeter-wave optical-beat signals at frequencies at 330.566 GHz with an rms phase fluctuation of 0.38 rad. A detailed analysis of the phase fluctuations was carried out on the basis of measured power spectral densities. The possibility of extending the mm-wave frequency up to 1 THz by using four cascadingly phase-locked lasers was also discussed.

We demonstrate a single high-order transverse mode surface emitting laser (VCSEL) with narrow trenches formed on a top surface. The design and the fabrication of a single high-order mode 850 nm GaAs VCSEL with micromachined surface relief are presented. Stable single-mode operation with a side-mode suppression ratio of over 40 dB was obtained in an entire measured current range. We obtained the maximum single mode power of over 3.5 mW and a record low series resistance of below 50 Ω. In addition, a single-lobe far field pattern is demonstrated even under high-order transverse mode operation by loading phase-shift on the top surface. A coupling efficiency with optical fibers is dramatically improved.

A 2D photonic crystal surface-emitting laser using a triangular lattice is developed, and current-injected lasing oscillation is demonstrated. From consideration of the Bragg diffraction condition in the 2D triangular-lattice structure, it is shown that the 2D coupling phenomenon occurs in the structure. As a result of the 2D periodicity of the structure, the longitudinal mode and lateral mode can be controlled, and stable single-mode oscillation is possible over a large 2D area. The lasing mode of the structure is analyzed by calculating the photonic band diagram by the 2D plane-wave expansion method, and we show that four band edges at which the lasing oscillation can occur exist at the Γ point. Current-injected lasing oscillation is successfully demonstrated at room temperature under pulsed conditions. The threshold current density is 3.2 kA/cm2 and the lasing wavelength is 1.285 µm. From the near-field and far-field patterns, it is shown that large-area 2D (diameter 480 µm) lasing oscillation occurs in the device and the divergence angle is very narrow (less than 1.8). We also demonstrate the correspondence between the measured lasing wavelengths and calculated band diagram by comparing the polarization characteristics with the calculated distribution of the electromagnetic field. The results indicate that 2D coherent lasing oscillation occurs due to the multi-directional coupling effect in the 2D photonic crystal. Finally, we show that the polarization patterns of the lasers can be controlled by introducing artificial lattice defects from the theoretical calculation.

Very reliable mode-locked semiconductor lasers have been developed. These devices provide high signal-to-noise ratio optical clock pulses of a few picoseconds temporal width in the 1.5-micrometer wavelength region. Potential applications of these lasers for high-bit-rate optical communication systems operating at over 40 Gbps including all-optical signal processing, and for very high-speed measurement systems are described.