3 dB bandwidth enhancement of single mode semiconductor lasers is confirmed numerically and experimentally when they are operated by intensity modulated signal light injection. 3 dB bandwidth is enlarged to 2.5 times of resonant frequency. The numerical analysis of rate equations predicts that the bandwidth enhancement is accomplished by the modal gain control of semiconductor lasers with injected intensity modulated signal light through non-linear gain coefficient term.
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Hiroki ISHIHARA, Yosuke SAITO, Wataru KOBAYASHI, Hiroshi YASAKA, "Bandwidth Enhanced Operation of Single Mode Semiconductor Laser by Intensity Modulated Signal Light Injection" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 9, pp. 1549-1551, September 2012, doi: 10.1587/transele.E95.C.1549.
Abstract: 3 dB bandwidth enhancement of single mode semiconductor lasers is confirmed numerically and experimentally when they are operated by intensity modulated signal light injection. 3 dB bandwidth is enlarged to 2.5 times of resonant frequency. The numerical analysis of rate equations predicts that the bandwidth enhancement is accomplished by the modal gain control of semiconductor lasers with injected intensity modulated signal light through non-linear gain coefficient term.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1549/_p
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@ARTICLE{e95-c_9_1549,
author={Hiroki ISHIHARA, Yosuke SAITO, Wataru KOBAYASHI, Hiroshi YASAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Bandwidth Enhanced Operation of Single Mode Semiconductor Laser by Intensity Modulated Signal Light Injection},
year={2012},
volume={E95-C},
number={9},
pages={1549-1551},
abstract={3 dB bandwidth enhancement of single mode semiconductor lasers is confirmed numerically and experimentally when they are operated by intensity modulated signal light injection. 3 dB bandwidth is enlarged to 2.5 times of resonant frequency. The numerical analysis of rate equations predicts that the bandwidth enhancement is accomplished by the modal gain control of semiconductor lasers with injected intensity modulated signal light through non-linear gain coefficient term.},
keywords={},
doi={10.1587/transele.E95.C.1549},
ISSN={1745-1353},
month={September},}
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TY - JOUR
TI - Bandwidth Enhanced Operation of Single Mode Semiconductor Laser by Intensity Modulated Signal Light Injection
T2 - IEICE TRANSACTIONS on Electronics
SP - 1549
EP - 1551
AU - Hiroki ISHIHARA
AU - Yosuke SAITO
AU - Wataru KOBAYASHI
AU - Hiroshi YASAKA
PY - 2012
DO - 10.1587/transele.E95.C.1549
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2012
AB - 3 dB bandwidth enhancement of single mode semiconductor lasers is confirmed numerically and experimentally when they are operated by intensity modulated signal light injection. 3 dB bandwidth is enlarged to 2.5 times of resonant frequency. The numerical analysis of rate equations predicts that the bandwidth enhancement is accomplished by the modal gain control of semiconductor lasers with injected intensity modulated signal light through non-linear gain coefficient term.
ER -