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[Keyword] gain saturation(5hit)

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  • Bandwidth Enhanced Operation of Single Mode Semiconductor Laser by Intensity Modulated Signal Light Injection

    Hiroki ISHIHARA  Yosuke SAITO  Wataru KOBAYASHI  Hiroshi YASAKA  

     
    BRIEF PAPER-Lasers, Quantum Electronics

      Vol:
    E95-C No:9
      Page(s):
    1549-1551

    3 dB bandwidth enhancement of single mode semiconductor lasers is confirmed numerically and experimentally when they are operated by intensity modulated signal light injection. 3 dB bandwidth is enlarged to 2.5 times of resonant frequency. The numerical analysis of rate equations predicts that the bandwidth enhancement is accomplished by the modal gain control of semiconductor lasers with injected intensity modulated signal light through non-linear gain coefficient term.

  • Gbit-Class Transmission Using SOA Data Rewriter for WDM-PON Open Access

    Satoshi NARIKAWA  Hiroaki SANJOH  Naoya SAKURAI  Kiyomi KUMOZAKI  

     
    PAPER-Fiber-Optic Transmission for Communications

      Vol:
    E91-B No:2
      Page(s):
    399-408

    We describe the transmission characteristics of a wavelength independent wavelength division multiplexing passive optical network (WDM-PON) based on a wavelength channel data rewriter (WCDR). The WCDR is composed of a linear amplifier (LA) and a saturated semiconductor optical amplifier (SOA), and by using the WCDR in optical network units (ONUs), we can erase the downstream signal and modulate the same wavelength channel with the upstream signal. In this paper, we analyze the data rewriting characteristic, the frequency chirp characteristic and the bit error rate (BER) degradation occasioned by the use of saturated SOAs. Furthermore, we report high-speed transmission with power penalty of less than 1 dB at bit rates of 1.25 Gbit/s, 2.5 Gbit/s and 10 Gbit/s for downstream signals and 1.25 Gbit/s for upstream signals after transmission through 40 km of single-mode fiber.

  • Modulation Characteristics of a Directly Modulated Super Luminescent Diode Followed by a Gain-Saturated Semiconductor Optical Amplifier

    Kyo INOUE  

     
    LETTER-Optoelectronics

      Vol:
    E83-C No:3
      Page(s):
    520-522

    A directly modulated LED or SLD (super luminescent diode) is attractive for low-cost lightwave systems such as access networks. This letter experimentally studies a directly modulated SLD followed by a gain-saturated semiconductor optical amplifier (SOA), and shows that the modulation rate is expanded in effect by the use of the gain-saturated SOA. This results from the shortened response time of the SLD due to the ASE light from the SOA and a level-equalizing effect in the gain-saturated SOA.

  • Automatic Gain Control of Erbium-Doped Fiber Amplifiers for WDM Transmission Systems

    Kuniaki MOTOSHIMA  Katsuhiro SHIMIZU  Katsumi TAKANO  Takashi MIZUOCHI  Tadayoshi KITAYAMA  Katsuyoshi ITO  

     
    PAPER-Optical Communication

      Vol:
    E80-B No:9
      Page(s):
    1311-1320

    Optical transmission systems with large capacity employing wavelength-division multiplexing (WDM) techniques are now widely under development. Optical amplifiers, especially Erbium-Doped Fiber Amplifiers (EDFA's), are vital components for such transmission systems. Optical amplifiers in WDM systems are employed as common amplifiers for all WDM'ed optical carriers, therefore, change in power of a specific carrier gives rise to gain fluctuation of the remaining carriers. In this paper, we discuss about automatic gain control (AGC) of EDFA for WDM'ed optical carriers under transient gain saturation. Two methods have been reported to perform AGC, i.e., pump feedback control method and compensation light feedback control method. Theory and experimental results have been already reported on pump feedback control method. Here, theory has been generalized to be applicable for compensation light feedback method including schematics with amplified spontaneous emission (ASE) as a probe light to measure the gain of EDFA. Experimental results have confirmed the analysis. Good performance has been obtained for both methods with simple electronic circuits and ASE has been found to work as an excellent probe light source.

  • Numerical Analysis of Stability Property of an Optically Injection-Locked Semiconductor Laser Taking Account of Gain Saturation

    Koichi IIYAMA  Ken-ichi HAYASHI  Yoshio IDA  

     
    PAPER-Opto-Electronics

      Vol:
    E75-C No:12
      Page(s):
    1536-1540

    Stability property of an optically injection-locked semiconductor laser taking account of gain saturation is discussed. Numerical analysis shows that stable locking region is broadened due to gain saturation. This is because of rapid damping of relaxation oscillation due to gain saturation. It is also found that stable locking region is also broadened with increasing injection current since damping of relaxation oscillation becomes strong with increasing injection current. Numerical calculations of lasing spectrum show that the magnitude of sidepeaks appeared at harmonics of relaxation oscillation frequency under unstable locking condition are suppressed due to gain saturation.