A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4 4 multiple wavelength micromachined vertical cavity filter array. The multi-wavelength filter array with a wavelength span of 45 nm was fabricated by partially etching off a GaAs wavelength control layer loaded on the top surface of device.

Photonic integrated circuits (PICs) produced by large-scale integration (LSI) on Si platforms have been intensively researched. Since thermal diffusion from the LSI logic layer is a serious obstacle to realizing a Si-based optical integrated circuit, we have proposed and realized athermal wavelength filters using Si slot waveguides embedded with benzocyclobutene (BCB). First, the athermal conditions were theoretically investigated by controlling the waveguide and gap width of the slot waveguides. In order to introduce the calculated waveguide structures to wavelength filters, the propagation losses and bending losses of the Si slot waveguides were evaluated. The propagation losses were measured to be 5.6 and 5.3 dB/cm for slot waveguide widths of 500 and 700 nm, respectively. Finally, athermal wavelength filters, a ring resonator, and a Mach-Zhender interferometer (MZI) with a slot waveguide width of 700 nm were designed and fabricated. Further, a temperature coefficient of -0.9 pm/K for the operating wavelength was achieved with the athermal MZI.

We have demonstrated a dynamically stable polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser (VCSEL) array grown on a GaAs (311)B substrate. A fabricated 3 3 VCSEL array consists of devices with an oxide aperture of 3.4 µm 3.4 µm. The threshold current was 0.61 0.05 mA and the threshold voltage was 1.79 0.03 V. All of the devices exhibited single-transverse mode operation with an injection current up to three times the threshold. The side-mode suppression ratio (SMSR) is larger than 30 dB. The array also exhibited stable-polarization operation with an orthogonal polarization suppression ratio (OPSR) of over 25 dB. We measured the time-resolved OPSR under square-wave direct modulation. It was found that the orthogonal non-lasing mode was suppressed even at the first peak of relaxation oscillation with OPSR > 17 dB. In an experiment of 5 Gb/s non-return-to-zero (NRZ) pseudo-random bit sequence (PRBS) modulation, the OPSR was maintained being greater than 27 dB. These observed stable and single polarization characteristics were originated from the anisotropic optical gain of strained GaInAs/GaAs quantum wells formed on (311)B substrate. We also carried out an intensity noise measurement under single-transverse and stable polarization operation for the first time. The relative intensity noise (RIN) of -140 dB/Hz was obtained. In addition, we achieved 2.5 Gb/s data transmission through a 100 m multi-mode fiber. No error floor was observed at -20 dBm of received power level. The minimum received power is determined by the thermal noise.

A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4 4 multiple wavelength micromachined vertical cavity filter array. The multi-wavelength filter array with a wavelength span of 45 nm was fabricated by partially etching off a GaAs wavelength control layer loaded on the top surface of device.

To realize three-dimensional (3D) optical interconnection on large-scale integration (LSI) circuits, layer-to-layer couplers based on Si-photonics platform were reviewed. In terms of optical cross talk, more than 1 µm layer distance is required for 3D interconnection. To meet this requirement for the layer-to-layer optical coupler, we proposed two types of couplers: a pair of grating couplers with metal mirrors for multi-layer distance coupling and taper-type directional couplers for neighboring layer distance coupling. Both structures produced a high coupling efficiency with relatively compact (∼100 µm) device sizes with a complementary metal oxide semiconductor (CMOS) compatible fabrication process.

We demonstrate a single high-order transverse mode surface emitting laser (VCSEL) with narrow trenches formed on a top surface. The design and the fabrication of a single high-order mode 850 nm GaAs VCSEL with micromachined surface relief are presented. Stable single-mode operation with a side-mode suppression ratio of over 40 dB was obtained in an entire measured current range. We obtained the maximum single mode power of over 3.5 mW and a record low series resistance of below 50 Ω. In addition, a single-lobe far field pattern is demonstrated even under high-order transverse mode operation by loading phase-shift on the top surface. A coupling efficiency with optical fibers is dramatically improved.

Magneto-optical (MO) switches operate with a dynamically applied magnetic field. The MO devices presented in this paper consist of microring resonators (MRRs) fabricated on amorphous silicon-on-garnet platform. Two types of MO switches with MRRs were developed. In the first type, the switching state is controlled by an external magnetic field component included in the device. By combination of MO and thermo-optic effects, wavelength tunable operation is possible without any additional heater, and broadband switching is achievable. The other type of switch is a self-holding optical switch integrated with an FeCoB thin-film magnet. The switching state is driven by the remanence of the integrated thin-film magnet, and the state is maintained without any power supply.