A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4
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Takeru AMANO, Fumio KOYAMA, Nobuhiko NISHIYAMA, Akihiro MATSUTANI, Kenichi IGA, "Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 5, pp. 678-684, May 2001, doi: .
Abstract: A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_5_678/_p
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@ARTICLE{e84-c_5_678,
author={Takeru AMANO, Fumio KOYAMA, Nobuhiko NISHIYAMA, Akihiro MATSUTANI, Kenichi IGA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter},
year={2001},
volume={E84-C},
number={5},
pages={678-684},
abstract={A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4
keywords={},
doi={},
ISSN={},
month={May},}
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TY - JOUR
TI - Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter
T2 - IEICE TRANSACTIONS on Electronics
SP - 678
EP - 684
AU - Takeru AMANO
AU - Fumio KOYAMA
AU - Nobuhiko NISHIYAMA
AU - Akihiro MATSUTANI
AU - Kenichi IGA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2001
AB - A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4
ER -