Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer
Summary :
Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.6 pp.808-813
- Publication Date
- 2001/06/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Nonvolatile Memories)
- Category
- FeRAMs
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Kenya SANO, Ryoichi OHARA, Takashi KAWAKUBO, "Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 808-813, June 2001, doi: .
Abstract: Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_808/_p
Copy
@ARTICLE{e84-c_6_808,
author={Kenya SANO, Ryoichi OHARA, Takashi KAWAKUBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer},
year={2001},
volume={E84-C},
number={6},
pages={808-813},
abstract={Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 808
EP - 813
AU - Kenya SANO
AU - Ryoichi OHARA
AU - Takashi KAWAKUBO
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.
ER -
English
