Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs
Summary :
The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (Cgs) and drain-source current (Ids) for the FETs. However, previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (Cgs or Ids) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of Cgs and Ids simultaneously. We also investigate the third-order intermodulation distortion (IMD3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD3 is found at the minimum source resistance (RS) and maximum load resistance (RL) in the equivalent output power (Pout) contour. Simulated results are compared with the load and source pull data, with good agreement.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.8 pp.1104-1110
- Publication Date
- 2001/08/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Kwang-Ho AHN, Soong-Hak LEE, Yoon-Ha JEONG, "Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 8, pp. 1104-1110, August 2001, doi: .
Abstract: The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (Cgs) and drain-source current (Ids) for the FETs. However, previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (Cgs or Ids) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of Cgs and Ids simultaneously. We also investigate the third-order intermodulation distortion (IMD3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD3 is found at the minimum source resistance (RS) and maximum load resistance (RL) in the equivalent output power (Pout) contour. Simulated results are compared with the load and source pull data, with good agreement.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_8_1104/_p
Copy
@ARTICLE{e84-c_8_1104,
author={Kwang-Ho AHN, Soong-Hak LEE, Yoon-Ha JEONG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs},
year={2001},
volume={E84-C},
number={8},
pages={1104-1110},
abstract={The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (Cgs) and drain-source current (Ids) for the FETs. However, previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (Cgs or Ids) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of Cgs and Ids simultaneously. We also investigate the third-order intermodulation distortion (IMD3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD3 is found at the minimum source resistance (RS) and maximum load resistance (RL) in the equivalent output power (Pout) contour. Simulated results are compared with the load and source pull data, with good agreement.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1104
EP - 1110
AU - Kwang-Ho AHN
AU - Soong-Hak LEE
AU - Yoon-Ha JEONG
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2001
AB - The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (Cgs) and drain-source current (Ids) for the FETs. However, previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (Cgs or Ids) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of Cgs and Ids simultaneously. We also investigate the third-order intermodulation distortion (IMD3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD3 is found at the minimum source resistance (RS) and maximum load resistance (RL) in the equivalent output power (Pout) contour. Simulated results are compared with the load and source pull data, with good agreement.
ER -
English
