Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET
Summary :
The off-state shunt GaAs FET, which is the most important for low distortion operation of the high power RF switch IC, is a very complicated device to analyze the RF voltage. Because the conventional measurement method has an influence on the behavior of the switch, it has not provided the correct measurement value. In this paper, we have realized a measurement method without touching the surface of the switch IC using EO-probe. As a result we achieved extremely low second and third harmonics of 70.5 dBc and 75.2 dBc, respectively at the input power of 35 dBm by adoptin SPDT switch IC composed of the multi-gate FET for the thru FET and the stacked-gate FET.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.12 pp.2036-2040
- Publication Date
- 2002/12/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
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Satoshi MAKIOKA, Yoshiharu ANDA, Daisuke UEDA, "Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 12, pp. 2036-2040, December 2002, doi: .
Abstract: The off-state shunt GaAs FET, which is the most important for low distortion operation of the high power RF switch IC, is a very complicated device to analyze the RF voltage. Because the conventional measurement method has an influence on the behavior of the switch, it has not provided the correct measurement value. In this paper, we have realized a measurement method without touching the surface of the switch IC using EO-probe. As a result we achieved extremely low second and third harmonics of 70.5 dBc and 75.2 dBc, respectively at the input power of 35 dBm by adoptin SPDT switch IC composed of the multi-gate FET for the thru FET and the stacked-gate FET.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_12_2036/_p
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@ARTICLE{e85-c_12_2036,
author={Satoshi MAKIOKA, Yoshiharu ANDA, Daisuke UEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET},
year={2002},
volume={E85-C},
number={12},
pages={2036-2040},
abstract={The off-state shunt GaAs FET, which is the most important for low distortion operation of the high power RF switch IC, is a very complicated device to analyze the RF voltage. Because the conventional measurement method has an influence on the behavior of the switch, it has not provided the correct measurement value. In this paper, we have realized a measurement method without touching the surface of the switch IC using EO-probe. As a result we achieved extremely low second and third harmonics of 70.5 dBc and 75.2 dBc, respectively at the input power of 35 dBm by adoptin SPDT switch IC composed of the multi-gate FET for the thru FET and the stacked-gate FET.},
keywords={},
doi={},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET
T2 - IEICE TRANSACTIONS on Electronics
SP - 2036
EP - 2040
AU - Satoshi MAKIOKA
AU - Yoshiharu ANDA
AU - Daisuke UEDA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2002
AB - The off-state shunt GaAs FET, which is the most important for low distortion operation of the high power RF switch IC, is a very complicated device to analyze the RF voltage. Because the conventional measurement method has an influence on the behavior of the switch, it has not provided the correct measurement value. In this paper, we have realized a measurement method without touching the surface of the switch IC using EO-probe. As a result we achieved extremely low second and third harmonics of 70.5 dBc and 75.2 dBc, respectively at the input power of 35 dBm by adoptin SPDT switch IC composed of the multi-gate FET for the thru FET and the stacked-gate FET.
ER -
English
