A new GaAs monolithic switch IC that can be operated with a single positive control voltage is developed. The implemented IC is provided two different biasing configurations with the switching FETs. Each FET can be biased independently by large capacitors fabricated employing the BST (Barium Strontium Titanate) technology. The fabricated SPDT (Single-Pole-Double-Throw) swicth IC shows insertion loss less than 1.0 dB and isolation over 25 dB in the frequency range of 0.1 GHz to 1.9 GHz with a single control voltage of 3 V.

A novel method to obtain a compact plastic package with higher isolation by providing subsidiary inner ground leads between outer leads is proposed and demonstrated. The effect of the subsidiary ground leads is investigated by using a 3-dimensional electromagnetic field simulation and measuring the fabricated packages. Newly designed package with subsidiary ground leads achieves higher isolation by more than 10 dB at 3 GHz as compared to a conventional package. This package is applied to GaAs SPDT switch IC's. Isolation of the switch IC's is improved by 5 dB at 3 GHz by the subsidiary inner ground leads. The isolation characteristics are discussed based on the equivalent circuit extracted from the simulation results.

The off-state shunt GaAs FET, which is the most important for low distortion operation of the high power RF switch IC, is a very complicated device to analyze the RF voltage. Because the conventional measurement method has an influence on the behavior of the switch, it has not provided the correct measurement value. In this paper, we have realized a measurement method without touching the surface of the switch IC using EO-probe. As a result we achieved extremely low second and third harmonics of 70.5 dBc and 75.2 dBc, respectively at the input power of 35 dBm by adoptin SPDT switch IC composed of the multi-gate FET for the thru FET and the stacked-gate FET.

InGaP/GaAs HBT with novel ledge coupled capacitor (LCC) structure has been proposed and demonstrated for the first time. The LCC employs an extrinsic InGaP ledge layer as a capacitor parallel to the base resistor. This configuration enables feeding RF signals directly into the base without passing them through the base resistor. With the fabricated HBT, no increase of leakage current between emitter and base electrode was observed. The maximum oscillation frequency (fmax) of the HBT was improved by 10 GHz as compared with an HBT without the LCC.

A GaAs defferential oscillator IC with on-chip LC resonator has been developed for suppressing the relative intensity noise (RIN) of a laser diode. The relationship between the Q-factor and minimum supply voltage for oscillation is fully described. In view of reducing the present LC resonator, we made use of BST (Barium Strontium Titanate) capacitor to make the resonator without increasing the chip area. The oscillation frequency is stable since it's determined by the geometry of the resonator. The experimentally fabricated oscillator IC achieved the output power of 12 dBm at the frequency of 600 MHz with voltage/current conditions of 2 V/20 mA. The present IC keeps quite stable RIN value less than -138 dB/Hz under the light-feedback condition up to 10%.