IEICE TRANSACTIONS on Electronics
CMOS Charge Pumps Using Cross-Coupled Charge Transfer Switches with Improved Voltage Pumping Gain and Low Gate-Oxide Stress for Low-Voltage Memory Circuits
Summary :
To overcome the problems of the modified Dickson pump like NCP-2, another pump (CCTS-1) where simple voltage doublers are cascaded in series and each of them has cross-coupled configuration is studied in this letter for possible use in low-voltage EEPROMs and DRAMs. Though this concept of cascading doublers has been previously proposed, it is firstly addressed in this letter that CCTS-1 has lower gate-oxide stress, improved voltage pumping gain, and better power efficiency than NCP-2 so that CCTS-1 can be more suitable for multi-stage pump in particular at low VCC. In addition, CCTS-2 is proposed to overcome the degraded body-effect of CCTS-1 without using boosted clocks when the stage number is large.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.1 pp.225-229
- Publication Date
- 2002/01/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Electronic Circuits
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Kyeong-Sik MIN, Jin-Hong AHN, "CMOS Charge Pumps Using Cross-Coupled Charge Transfer Switches with Improved Voltage Pumping Gain and Low Gate-Oxide Stress for Low-Voltage Memory Circuits" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 1, pp. 225-229, January 2002, doi: .
Abstract: To overcome the problems of the modified Dickson pump like NCP-2, another pump (CCTS-1) where simple voltage doublers are cascaded in series and each of them has cross-coupled configuration is studied in this letter for possible use in low-voltage EEPROMs and DRAMs. Though this concept of cascading doublers has been previously proposed, it is firstly addressed in this letter that CCTS-1 has lower gate-oxide stress, improved voltage pumping gain, and better power efficiency than NCP-2 so that CCTS-1 can be more suitable for multi-stage pump in particular at low VCC. In addition, CCTS-2 is proposed to overcome the degraded body-effect of CCTS-1 without using boosted clocks when the stage number is large.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_1_225/_p
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@ARTICLE{e85-c_1_225,
author={Kyeong-Sik MIN, Jin-Hong AHN, },
journal={IEICE TRANSACTIONS on Electronics},
title={CMOS Charge Pumps Using Cross-Coupled Charge Transfer Switches with Improved Voltage Pumping Gain and Low Gate-Oxide Stress for Low-Voltage Memory Circuits},
year={2002},
volume={E85-C},
number={1},
pages={225-229},
abstract={To overcome the problems of the modified Dickson pump like NCP-2, another pump (CCTS-1) where simple voltage doublers are cascaded in series and each of them has cross-coupled configuration is studied in this letter for possible use in low-voltage EEPROMs and DRAMs. Though this concept of cascading doublers has been previously proposed, it is firstly addressed in this letter that CCTS-1 has lower gate-oxide stress, improved voltage pumping gain, and better power efficiency than NCP-2 so that CCTS-1 can be more suitable for multi-stage pump in particular at low VCC. In addition, CCTS-2 is proposed to overcome the degraded body-effect of CCTS-1 without using boosted clocks when the stage number is large.},
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - CMOS Charge Pumps Using Cross-Coupled Charge Transfer Switches with Improved Voltage Pumping Gain and Low Gate-Oxide Stress for Low-Voltage Memory Circuits
T2 - IEICE TRANSACTIONS on Electronics
SP - 225
EP - 229
AU - Kyeong-Sik MIN
AU - Jin-Hong AHN
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2002
AB - To overcome the problems of the modified Dickson pump like NCP-2, another pump (CCTS-1) where simple voltage doublers are cascaded in series and each of them has cross-coupled configuration is studied in this letter for possible use in low-voltage EEPROMs and DRAMs. Though this concept of cascading doublers has been previously proposed, it is firstly addressed in this letter that CCTS-1 has lower gate-oxide stress, improved voltage pumping gain, and better power efficiency than NCP-2 so that CCTS-1 can be more suitable for multi-stage pump in particular at low VCC. In addition, CCTS-2 is proposed to overcome the degraded body-effect of CCTS-1 without using boosted clocks when the stage number is large.
ER -
English
