In this paper, we review the progress in BiSrCaCuO-2212 Intrinsic Josephson junctions (IJJs) by summarizing our recent results in fabrication and high frequency experiments. Using a double-side fabrication process, a well defined number of intrinsic Josephson junctions in a well defined geometry can be fabricated. The junctions in the stack are quite homogeneous, and the power distribution of external irradiation among the junctions is even. Shapiro steps are clearly observed up to 2.5 THz, and the general condition for the occurrence of Shapiro steps at frequency frf is that it should be much greater than the plasma frequency fpl. Under certain conditions the Shapiro steps are zero-crossing, making some applications possible, such as quantum voltage standard etc.
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Huabing WANG, Jian CHEN, Lixing YOU, Peiheng WU, Tsutomu YAMASHITA, "Intrinsic Josephson Junctions in BiSrCaCuO-2212: Recent Progress" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 3, pp. 691-695, March 2002, doi: .
Abstract: In this paper, we review the progress in BiSrCaCuO-2212 Intrinsic Josephson junctions (IJJs) by summarizing our recent results in fabrication and high frequency experiments. Using a double-side fabrication process, a well defined number of intrinsic Josephson junctions in a well defined geometry can be fabricated. The junctions in the stack are quite homogeneous, and the power distribution of external irradiation among the junctions is even. Shapiro steps are clearly observed up to 2.5 THz, and the general condition for the occurrence of Shapiro steps at frequency frf is that it should be much greater than the plasma frequency fpl. Under certain conditions the Shapiro steps are zero-crossing, making some applications possible, such as quantum voltage standard etc.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_3_691/_p
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@ARTICLE{e85-c_3_691,
author={Huabing WANG, Jian CHEN, Lixing YOU, Peiheng WU, Tsutomu YAMASHITA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Intrinsic Josephson Junctions in BiSrCaCuO-2212: Recent Progress},
year={2002},
volume={E85-C},
number={3},
pages={691-695},
abstract={In this paper, we review the progress in BiSrCaCuO-2212 Intrinsic Josephson junctions (IJJs) by summarizing our recent results in fabrication and high frequency experiments. Using a double-side fabrication process, a well defined number of intrinsic Josephson junctions in a well defined geometry can be fabricated. The junctions in the stack are quite homogeneous, and the power distribution of external irradiation among the junctions is even. Shapiro steps are clearly observed up to 2.5 THz, and the general condition for the occurrence of Shapiro steps at frequency frf is that it should be much greater than the plasma frequency fpl. Under certain conditions the Shapiro steps are zero-crossing, making some applications possible, such as quantum voltage standard etc.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - Intrinsic Josephson Junctions in BiSrCaCuO-2212: Recent Progress
T2 - IEICE TRANSACTIONS on Electronics
SP - 691
EP - 695
AU - Huabing WANG
AU - Jian CHEN
AU - Lixing YOU
AU - Peiheng WU
AU - Tsutomu YAMASHITA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2002
AB - In this paper, we review the progress in BiSrCaCuO-2212 Intrinsic Josephson junctions (IJJs) by summarizing our recent results in fabrication and high frequency experiments. Using a double-side fabrication process, a well defined number of intrinsic Josephson junctions in a well defined geometry can be fabricated. The junctions in the stack are quite homogeneous, and the power distribution of external irradiation among the junctions is even. Shapiro steps are clearly observed up to 2.5 THz, and the general condition for the occurrence of Shapiro steps at frequency frf is that it should be much greater than the plasma frequency fpl. Under certain conditions the Shapiro steps are zero-crossing, making some applications possible, such as quantum voltage standard etc.
ER -