Hetero-Interface Properties of SiO2/4H-SiC on Various Crystal Orientations
Summary :
Hetero-interface properties of SiO2/4H-SiC on (0001), (11-20), and (03-38) crystal orientations are presented. Epitaxial growth on new crystal orientations, (11-20) and (03-38), is described by comparing with the growth on (0001). Using thermal oxidation with wet oxygen, metal-oxide-SiC (MOS) structure was fabricated. From high-frequency capacitance-voltage characteristics measured at 300 K and 100 K, the interface properties were characterized semi-quantitatively. The interface state density was precisely determined using the conductance method for the MOS structure at 300 K. The new crystal orientations have the lower interface state density near the conduction band edge than (0001). From the characteristics of inversion-type planar MOSFETs, higher channel mobilities were obtained on (03-38) and (11-20) than on (0001). The cause of the difference in the channel mobility is speculated by the difference bond configuration of the three crystal orientations.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.1943-1948
- Publication Date
- 2003/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Hiroyuki MATSUNAMI, Tsunenobu KIMOTO, Hiroshi YANO, "Hetero-Interface Properties of SiO2/4H-SiC on Various Crystal Orientations" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 1943-1948, October 2003, doi: .
Abstract: Hetero-interface properties of SiO2/4H-SiC on (0001), (11-20), and (03-38) crystal orientations are presented. Epitaxial growth on new crystal orientations, (11-20) and (03-38), is described by comparing with the growth on (0001). Using thermal oxidation with wet oxygen, metal-oxide-SiC (MOS) structure was fabricated. From high-frequency capacitance-voltage characteristics measured at 300 K and 100 K, the interface properties were characterized semi-quantitatively. The interface state density was precisely determined using the conductance method for the MOS structure at 300 K. The new crystal orientations have the lower interface state density near the conduction band edge than (0001). From the characteristics of inversion-type planar MOSFETs, higher channel mobilities were obtained on (03-38) and (11-20) than on (0001). The cause of the difference in the channel mobility is speculated by the difference bond configuration of the three crystal orientations.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_1943/_p
Copy
@ARTICLE{e86-c_10_1943,
author={Hiroyuki MATSUNAMI, Tsunenobu KIMOTO, Hiroshi YANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Hetero-Interface Properties of SiO2/4H-SiC on Various Crystal Orientations},
year={2003},
volume={E86-C},
number={10},
pages={1943-1948},
abstract={Hetero-interface properties of SiO2/4H-SiC on (0001), (11-20), and (03-38) crystal orientations are presented. Epitaxial growth on new crystal orientations, (11-20) and (03-38), is described by comparing with the growth on (0001). Using thermal oxidation with wet oxygen, metal-oxide-SiC (MOS) structure was fabricated. From high-frequency capacitance-voltage characteristics measured at 300 K and 100 K, the interface properties were characterized semi-quantitatively. The interface state density was precisely determined using the conductance method for the MOS structure at 300 K. The new crystal orientations have the lower interface state density near the conduction band edge than (0001). From the characteristics of inversion-type planar MOSFETs, higher channel mobilities were obtained on (03-38) and (11-20) than on (0001). The cause of the difference in the channel mobility is speculated by the difference bond configuration of the three crystal orientations.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Hetero-Interface Properties of SiO2/4H-SiC on Various Crystal Orientations
T2 - IEICE TRANSACTIONS on Electronics
SP - 1943
EP - 1948
AU - Hiroyuki MATSUNAMI
AU - Tsunenobu KIMOTO
AU - Hiroshi YANO
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - Hetero-interface properties of SiO2/4H-SiC on (0001), (11-20), and (03-38) crystal orientations are presented. Epitaxial growth on new crystal orientations, (11-20) and (03-38), is described by comparing with the growth on (0001). Using thermal oxidation with wet oxygen, metal-oxide-SiC (MOS) structure was fabricated. From high-frequency capacitance-voltage characteristics measured at 300 K and 100 K, the interface properties were characterized semi-quantitatively. The interface state density was precisely determined using the conductance method for the MOS structure at 300 K. The new crystal orientations have the lower interface state density near the conduction band edge than (0001). From the characteristics of inversion-type planar MOSFETs, higher channel mobilities were obtained on (03-38) and (11-20) than on (0001). The cause of the difference in the channel mobility is speculated by the difference bond configuration of the three crystal orientations.
ER -
English
