Reliability Analysis of GaN-Based LEDs for Solid State Illumination

Gaudenzio MENEGHESSO; Simone LEVADA; Roberto PIEROBON; Fabiana RAMPAZZO; Enrico ZANONI; Anna CAVALLINI; Manfredo MANFREDI; Shawn DU; Ivan ELIASHEVICH

Reliability Analysis of GaN-Based LEDs for Solid State Illumination

Gaudenzio MENEGHESSO, Simone LEVADA, Roberto PIEROBON, Fabiana RAMPAZZO, Enrico ZANONI, Anna CAVALLINI, Manfredo MANFREDI, Shawn DU, Ivan ELIASHEVICH

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This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and ElectroLuminescence (EL) spectra indicate the creation of extended defects in devices aged at very high current density.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2032-2038

Publication Date: 2003/10/01

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)

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Gaudenzio MENEGHESSO, Simone LEVADA, Roberto PIEROBON, Fabiana RAMPAZZO, Enrico ZANONI, Anna CAVALLINI, Manfredo MANFREDI, Shawn DU, Ivan ELIASHEVICH, "Reliability Analysis of GaN-Based LEDs for Solid State Illumination" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 10, pp. 2032-2038, October 2003, doi: .
Abstract: This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and ElectroLuminescence (EL) spectra indicate the creation of extended defects in devices aged at very high current density.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2032/_p

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@ARTICLE{e86-c_10_2032,
author={Gaudenzio MENEGHESSO, Simone LEVADA, Roberto PIEROBON, Fabiana RAMPAZZO, Enrico ZANONI, Anna CAVALLINI, Manfredo MANFREDI, Shawn DU, Ivan ELIASHEVICH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reliability Analysis of GaN-Based LEDs for Solid State Illumination},
year={2003},
volume={E86-C},
number={10},
pages={2032-2038},
abstract={This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and ElectroLuminescence (EL) spectra indicate the creation of extended defects in devices aged at very high current density.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Reliability Analysis of GaN-Based LEDs for Solid State Illumination
T2 - IEICE TRANSACTIONS on Electronics
SP - 2032
EP - 2038
AU - Gaudenzio MENEGHESSO
AU - Simone LEVADA
AU - Roberto PIEROBON
AU - Fabiana RAMPAZZO
AU - Enrico ZANONI
AU - Anna CAVALLINI
AU - Manfredo MANFREDI
AU - Shawn DU
AU - Ivan ELIASHEVICH
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and ElectroLuminescence (EL) spectra indicate the creation of extended defects in devices aged at very high current density.
ER -