Invariants of Petri nets are fundamental algebraic characteristics of Petri nets, and are used in various situations, such as checking (as necessity of) liveness, boundedness, periodicity and so on. Any given Petri net N has two kinds of invariants: a P-invariant is a |P|-dimensional vector Y with Yt A = and a T-invariant is a |T|-dimensional vector X with A X = for the place-transition incidence matrix A of N. T-invariants are nonnegative integer vectors, while this is not always the case with P-invariants. This paper deals only with nonnegative integer invariants (invariants that are nonnegative vectors) and shows results common to the two invariants. For simplicity of discussion, only P-invariants are treated. The Fourier-Motzkin method is well-known for computing all minimal support integer invariants. This method, however, has a critical deficiency such that, even if a given Perti net N has any invariant, it is likely that no invariants are obtained because of an overflow in storing intermediate vectors as candidates for invariants. The subject of the paper is to give an overview and results known to us for efficiently computing minimal-support nonnegative integer invariants of a given Petri net by means of the Fourier-Motzkin method. Also included are algorithms for efficiently extracting siphon-traps of a Petri net.

A siphon-trap(ST) of a Petri net N = (P,T,E,α,β) is defined as a set S of places such that, for any transition t, there is an edge from t to a place of S if and only if there is an edge from a place of S to t. A P-invariant is a |P|-dimensional vector Y with YtA = for the place-transition incidence matrix A of N. The Fourier-Motzkin method is well-known for computing all such invariants. This method, however, has a critical deficiency such that, even if a given Perti net N has any invariant, it is likely that no invariants are output because of memory overflow in storing intermediary vectors as candidates for invariants. In this paper, we propose an algorithm STFM_N for computing minimal-support nonnegative integer invariants: it tries to decrease the number of such candidate vectors in order to overcome this deficiency, by restricting computation of invariants to siphon-traps. It is shown, through experimental results, that STFM_N has high possibility of finding, if any, more minimal-support nonnegative integer invariants than any existing algorithm.

This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and ElectroLuminescence (EL) spectra indicate the creation of extended defects in devices aged at very high current density.

We report the investigation of major dispersion mechanisms such as self-heating, trapping, current collapse, and floating-body effects present in AlGaN/GaN HFETs. These effects are analyzed using DC/Pulsed IV, load-pull, low-frequency noise systems, and a cryogenic probe station. This study leads to a better understanding of the device physics, which is critical for accurate large-signal modeling and device optimization.

A siphon-trap of a Petri net N is defined as a place set S with S = S, where S = { u| N has an edge from u to a vertex of S} and S = { v| N has an edge from a vertex of S to v}. A minimal siphon-trap is a siphon-trap such that any proper subset is not a siphon-trap. The following polynomial-time algorithms are proposed: (1) FDST for finding, if any, a minimal siphon-trap or even a maximal class of mutually disjoint minimal siphon-traps of a given Petri net; (2) FDSTi that repeats FDST i times in order to extract more minimal siphon-traps than FDST. (3) STFM_T (STFM_Ti, respectively) which is a combination of the Fourier-Motzkin method and FDST (FDSTi) and which has high possibility of finding, if any, at least one minimal-support nonnegative integer invariant.

We consider only P-invariants that are nonnegative integer vectors in this paper. An P-invariant of a Petri net N=(P,T,E,α,β) is a |P|-dimensional vector Y with Yt A = for the place-transition incidence matrix A of N. The support of an invariant is the set of elements having nonzero values in the vector. Since any invariant is expressed as a linear combination of minimal-support invariants (ms-invariants for short) with nonnegative rational coefficients, it is usual to try to obtain either several invariants or the set of all ms-invariants. The Fourier-Motzkin method (FM) is well-known for computing a set of invariants including all ms-invariants. It has, however, critical deficiencies such that, even if invariants exist, none of them may be computed because of memory overflow caused by storing candidate vectors for invariants and such that, even when a set of invariants are produced, many non-ms invariants may be included. We are going to propose the following two methods: (1) FM1_M2 that finds a smallest possible set of invariants including all ms-invariants; (2) STFM that necessarily produces one or more invariants if they exist. Experimental results are given to show their superiority over existing ones.

This paper presents the effect of stress on device degradation in metal-oxide-semiconductor field-effect transistors (MOSFETs) due to stud bumping. Stud bumping above the MOSFET region generates interface traps at the Si/SiO2 interface and results in the degradation of transconductance in N-channel MOSFETs. The interface traps are apparently eliminated by both nitrogen and hydrogen annealing. However, the hot-carrier immunity after hydrogen annealing is one order of magnitude stronger than that after nitrogen annealing. This effect is explained by the termination of dangling bonds with hydrogen atoms.

A formal necessary and sufficient condition on the general Petri net reachability problem is presented by eliminating all spurious solutions among known nonnegative integer solutions of state equation and unifying all the causes of those spurious solutions into a maximal-strongly-connected and siphon-and-trap subnet Nw. This result is based on the decomposition of a given net (N, Mo) with Md and the concepts of "no immature siphon at the reduced initial marking Mwo" and "no immature trap at the reduced end marking Mwd" on Nw which are both extended from "no token-free siphon at the initial marking Mo" and "no token-free trap at the end marking Md" on N, respectively, which have been both effectively, explicitly or implicitly, used in the well-known fundamental and simple subclasses.

Petri net is a graphical and mathematical tool for modelling, analysis, verification, and evaluation of discrete event systems. Liveness is one of the most important problems of Petri net analysis. This is concerned with a capability for firing of transitions and can be interpreted as a problem to decide whether the system under consideration is always able to reach a stationary behavior, or to decide whether the system is free from any redundant elements. An asymmetric choice (AC) net is a superclass of useful subclasses such as EFCs, FCs, SMs, and MGs, where SMs admit no synchronization, MGs admit no conflicts, FCs as well as EFCs admit no confusion, and ACs allow asymmetric confusion but disallow symmetric confusion. It is known that an AC net N is live iff it is place-live, but this is not the "initial-marking-based" condition and place-liveness is in general hard to test. For the initial-marking-based liveness for AC nets, it is only known that an AC net N is live if (but not only if) every deadlock in N contains a marked structural trap.

Up to now, the only useful and well-known structural or initial-marking-based necessary and sufficient liveness conditions of Petri nets have only been those of an extended free-choice (EFC) net and its subclasses such as a free-choice (FC) net, a forward conflict free (FCF) net, a marked graph (MG), and a state machine (SM). All the above subclasses are activated only by deadlock-trap properties (i.e., real d-t properties in this paper), which mean that every minimal structural deadlock (MSDL ND=(SD, TD, FD, MoD)) in a net contains at least one live minimal structural trap (MSTR NT=(ST, TT, FT, MoT)) which is initially marked. However, the necessary and sufficient liveness conditions for EFCF, EBCF, EMGEFCFEBCF, AC (EFCFC), and the net with kindling traps NKT have recently been determined, in which each MSDL without real d-t properties was also activated by a new type of trap of trap, i.e., behavioral traps (BTRs), which are defined by introducing a virtual MSTR, a virtual maximal structural trap (virtual STR), a virtual MSDL, and a virtual maximal structural deadlock (virtual SDL) into a target MSDL. In this paper, a structural or initial-marking-based necessary and sufficient condition for local liveness (i.e., virtual deadlock-trap properties) of each MSDL ND s.t. SDST, SDST, SDST (but ND s.t. SDST is dead owing to real deadlock-trap properties) in a general Petri net N is presented by extending that in NKT. Specifically, live minimal behavioral traps (MBTRs) as well as live maximal behavioral traps (BTRs), i.e., virtual deadlock-trap properties, in a general Petri net N are characterized using the real d-t properties of each MSDL ND s.t. SDST for a general Petri net N, which were also obtained by extending the concept of return paths in NKT in connection with an MSDL which contains at least one MSTR and by using the concepts of T-cornucopias and absolute T-cornucopias in a subclass Ñ of N. In other words, BTRs are defined by introducing a virtual MSTR, a virtual STR, a virtual MSDL, and a virtual SDL into a target MSDL without real d-t properties. Additionally, a structural or initial-marking-based necessary and sufficient condition for liveness of a new subclass Nn of a general Petri net N (i.e., a general Petri net without time) is derived, and the usefulness of the obtained results is also discussed.

The data retention characteristics of a Flash memory cell with a self-aligned double poly-Si stacked structure have been drastically improved by applying a bi-polarity write and erase technology which uses uniform Fowler-Nordheim tunneling over the whole channel area both during write and erase. It is clarified experimentally that the detrapping of electrons from the gate oxide to the substrate results in an extended retention time. A bi-polarity write and erase technology also guarantees a wide cell threshold voltage window even after 106 write/erase cycles. This technology results in a highly reliable EEPROM with an extended data retention time.

A unified model for frequency-dependent characteristics of transconductance and output resistance is presented that incorporates the dynamics of quasi-Fermi levels. Using this model, multiple-frequency dispersion and pulse-narrowing phenomena in GaAs MESFETs are demonstrated based on the drift-diffusion transport theory and a Schockley-Read-Hall-type deep trap model, where rate equations for multiple trapping processes are analyzed self-consistently. It is shown that the complex frequency dependence is due to both spatial and temporal effects of multiple traps.

The structural necessary and sufficient condition for "the transition-liveness means the place-liveness and vice-versa" of a subclass NII of general Petri nets is given as "the place and transition live Petri net, or PTL net, ÑII". Furthermore, "the one-token-condition Petri net, or OTC net, II" which means that every MSDL (minimal structural deadlock) is "transition and place live" under at least one initial token, i.e., II is "transition and place live" under the above initial marking. These subclasses NII, ÑII( NII), and II(ÑII) are almost the general Petri nets except at least one MSTR(minimal structural trap) and at least one pair of "a virtual MSTR or a virtual STR" and "a virtual MSDL" of an MBTR (minimal behavioral trap) in connection with making an MSDL transition-live.