IEICE TRANSACTIONS on Electronics
Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling
Summary :
The data retention characteristics of a Flash memory cell with a self-aligned double poly-Si stacked structure have been drastically improved by applying a bi-polarity write and erase technology which uses uniform Fowler-Nordheim tunneling over the whole channel area both during write and erase. It is clarified experimentally that the detrapping of electrons from the gate oxide to the substrate results in an extended retention time. A bi-polarity write and erase technology also guarantees a wide cell threshold voltage window even after 106 write/erase cycles. This technology results in a highly reliable EEPROM with an extended data retention time.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.8 pp.1287-1295
- Publication Date
- 1994/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
- Category
- Non-volatile Memory
Authors
Keyword
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Seiichi ARITOME, Riichiro SHIROTA, Koji SAKUI, Fujio MASUOKA, "Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 8, pp. 1287-1295, August 1994, doi: .
Abstract: The data retention characteristics of a Flash memory cell with a self-aligned double poly-Si stacked structure have been drastically improved by applying a bi-polarity write and erase technology which uses uniform Fowler-Nordheim tunneling over the whole channel area both during write and erase. It is clarified experimentally that the detrapping of electrons from the gate oxide to the substrate results in an extended retention time. A bi-polarity write and erase technology also guarantees a wide cell threshold voltage window even after 106 write/erase cycles. This technology results in a highly reliable EEPROM with an extended data retention time.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_8_1287/_p
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@ARTICLE{e77-c_8_1287,
author={Seiichi ARITOME, Riichiro SHIROTA, Koji SAKUI, Fujio MASUOKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling},
year={1994},
volume={E77-C},
number={8},
pages={1287-1295},
abstract={The data retention characteristics of a Flash memory cell with a self-aligned double poly-Si stacked structure have been drastically improved by applying a bi-polarity write and erase technology which uses uniform Fowler-Nordheim tunneling over the whole channel area both during write and erase. It is clarified experimentally that the detrapping of electrons from the gate oxide to the substrate results in an extended retention time. A bi-polarity write and erase technology also guarantees a wide cell threshold voltage window even after 106 write/erase cycles. This technology results in a highly reliable EEPROM with an extended data retention time.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling
T2 - IEICE TRANSACTIONS on Electronics
SP - 1287
EP - 1295
AU - Seiichi ARITOME
AU - Riichiro SHIROTA
AU - Koji SAKUI
AU - Fujio MASUOKA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1994
AB - The data retention characteristics of a Flash memory cell with a self-aligned double poly-Si stacked structure have been drastically improved by applying a bi-polarity write and erase technology which uses uniform Fowler-Nordheim tunneling over the whole channel area both during write and erase. It is clarified experimentally that the detrapping of electrons from the gate oxide to the substrate results in an extended retention time. A bi-polarity write and erase technology also guarantees a wide cell threshold voltage window even after 106 write/erase cycles. This technology results in a highly reliable EEPROM with an extended data retention time.
ER -
English
