IEICE TRANSACTIONS on Electronics
Analysis of Injection Current with Electron Temperature for High-K Gate Stacks
Summary :
Though, high dielectric constant material is a possible near future solution in order to suppress gate current densities of MOSFETs, the barrier height generally decreases with an increasing dielectric constant. In this paper, the injection current through gate stacks has been calculated while taking into account the electron temperature using the W.K.B. method to understand the impact of the injection current from the drain edge.
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- IEICE TRANSACTIONS on Electronics Vol.E86-C No.3 pp.325-329
- Publication Date
- 2003/03/01
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
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Yasuyuki OHKURA, Hiroyuki TAKASHINO, Shoji WAKAHARA, Kenji NISHI, "Analysis of Injection Current with Electron Temperature for High-K Gate Stacks" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 3, pp. 325-329, March 2003, doi: .
Abstract: Though, high dielectric constant material is a possible near future solution in order to suppress gate current densities of MOSFETs, the barrier height generally decreases with an increasing dielectric constant. In this paper, the injection current through gate stacks has been calculated while taking into account the electron temperature using the W.K.B. method to understand the impact of the injection current from the drain edge.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_3_325/_p
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@ARTICLE{e86-c_3_325,
author={Yasuyuki OHKURA, Hiroyuki TAKASHINO, Shoji WAKAHARA, Kenji NISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Injection Current with Electron Temperature for High-K Gate Stacks},
year={2003},
volume={E86-C},
number={3},
pages={325-329},
abstract={Though, high dielectric constant material is a possible near future solution in order to suppress gate current densities of MOSFETs, the barrier height generally decreases with an increasing dielectric constant. In this paper, the injection current through gate stacks has been calculated while taking into account the electron temperature using the W.K.B. method to understand the impact of the injection current from the drain edge.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - Analysis of Injection Current with Electron Temperature for High-K Gate Stacks
T2 - IEICE TRANSACTIONS on Electronics
SP - 325
EP - 329
AU - Yasuyuki OHKURA
AU - Hiroyuki TAKASHINO
AU - Shoji WAKAHARA
AU - Kenji NISHI
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2003
AB - Though, high dielectric constant material is a possible near future solution in order to suppress gate current densities of MOSFETs, the barrier height generally decreases with an increasing dielectric constant. In this paper, the injection current through gate stacks has been calculated while taking into account the electron temperature using the W.K.B. method to understand the impact of the injection current from the drain edge.
ER -
English
