IEICE TRANSACTIONS on Electronics
100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions
Summary :
The key elements of sub-100 nm MOSFET modeling for circuit simulation are accurate representation of new physical phenomena arising from advancing technologies and numerical efficacy. We summarize the history of MOSFET modeling, and address difficulties faced by conventional methods. The advantage of the surface-potential-based approach will be emphasized. Perspectives for next generations will be also discussed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E86-C No.6 pp.1009-1021
- Publication Date
- 2003/06/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
- Category
Authors
Mitiko MIURA-MATTAUSCH
Hiroaki UENO
Hans Juergen MATTAUSCH
Keiichi MORIKAWA
Satoshi ITOH
Akiyoshi KOBAYASHI
Hiroo MASUDA
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Mitiko MIURA-MATTAUSCH, Hiroaki UENO, Hans Juergen MATTAUSCH, Keiichi MORIKAWA, Satoshi ITOH, Akiyoshi KOBAYASHI, Hiroo MASUDA, "100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 6, pp. 1009-1021, June 2003, doi: .
Abstract: The key elements of sub-100 nm MOSFET modeling for circuit simulation are accurate representation of new physical phenomena arising from advancing technologies and numerical efficacy. We summarize the history of MOSFET modeling, and address difficulties faced by conventional methods. The advantage of the surface-potential-based approach will be emphasized. Perspectives for next generations will be also discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_6_1009/_p
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@ARTICLE{e86-c_6_1009,
author={Mitiko MIURA-MATTAUSCH, Hiroaki UENO, Hans Juergen MATTAUSCH, Keiichi MORIKAWA, Satoshi ITOH, Akiyoshi KOBAYASHI, Hiroo MASUDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions},
year={2003},
volume={E86-C},
number={6},
pages={1009-1021},
abstract={The key elements of sub-100 nm MOSFET modeling for circuit simulation are accurate representation of new physical phenomena arising from advancing technologies and numerical efficacy. We summarize the history of MOSFET modeling, and address difficulties faced by conventional methods. The advantage of the surface-potential-based approach will be emphasized. Perspectives for next generations will be also discussed.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - 100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions
T2 - IEICE TRANSACTIONS on Electronics
SP - 1009
EP - 1021
AU - Mitiko MIURA-MATTAUSCH
AU - Hiroaki UENO
AU - Hans Juergen MATTAUSCH
AU - Keiichi MORIKAWA
AU - Satoshi ITOH
AU - Akiyoshi KOBAYASHI
AU - Hiroo MASUDA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2003
AB - The key elements of sub-100 nm MOSFET modeling for circuit simulation are accurate representation of new physical phenomena arising from advancing technologies and numerical efficacy. We summarize the history of MOSFET modeling, and address difficulties faced by conventional methods. The advantage of the surface-potential-based approach will be emphasized. Perspectives for next generations will be also discussed.
ER -
English
