This paper discusses direct optical injection locking of a millimeter-wave oscillator using an InP/InGaAs heterojunction phototransistor (HPT) and its applications. Previously reported optically injection-locked oscillators (OILOs) are reviewed first. In particular, the features of a direct OILO (DOILO), where synchronization can be achieved by illuminating the active oscillator device itself, are discussed in comparison with the indirect OILO. DOILOs with excellent characteristics require high-performance transistors having both a high maximum oscillation frequency and fast photoresponse. We have developed high-performance opto-microwave-compatible InP/InGaAs HPTs whose layer and fabrication process are fully compatible with ultrahigh-speed heterojunction bipolar transistors. The paper discusses the photocoupling structure, and it is shown that the back-illuminated structure with the aid of InP subcollector enables one to achieve a 100-GHz-class DOILO. The configuration and performance of the 100-GHz-class DOILO are then presented; in particular, injection locking from optical signals with a modulation or beat frequency of around the fundamental (
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Hideki KAMITSUNA, Tsugumichi SHIBATA, Kenji KURISHIMA, Minoru IDA, "Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 7, pp. 1290-1298, July 2003, doi: .
Abstract: This paper discusses direct optical injection locking of a millimeter-wave oscillator using an InP/InGaAs heterojunction phototransistor (HPT) and its applications. Previously reported optically injection-locked oscillators (OILOs) are reviewed first. In particular, the features of a direct OILO (DOILO), where synchronization can be achieved by illuminating the active oscillator device itself, are discussed in comparison with the indirect OILO. DOILOs with excellent characteristics require high-performance transistors having both a high maximum oscillation frequency and fast photoresponse. We have developed high-performance opto-microwave-compatible InP/InGaAs HPTs whose layer and fabrication process are fully compatible with ultrahigh-speed heterojunction bipolar transistors. The paper discusses the photocoupling structure, and it is shown that the back-illuminated structure with the aid of InP subcollector enables one to achieve a 100-GHz-class DOILO. The configuration and performance of the 100-GHz-class DOILO are then presented; in particular, injection locking from optical signals with a modulation or beat frequency of around the fundamental (
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_7_1290/_p
Copy
@ARTICLE{e86-c_7_1290,
author={Hideki KAMITSUNA, Tsugumichi SHIBATA, Kenji KURISHIMA, Minoru IDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications},
year={2003},
volume={E86-C},
number={7},
pages={1290-1298},
abstract={This paper discusses direct optical injection locking of a millimeter-wave oscillator using an InP/InGaAs heterojunction phototransistor (HPT) and its applications. Previously reported optically injection-locked oscillators (OILOs) are reviewed first. In particular, the features of a direct OILO (DOILO), where synchronization can be achieved by illuminating the active oscillator device itself, are discussed in comparison with the indirect OILO. DOILOs with excellent characteristics require high-performance transistors having both a high maximum oscillation frequency and fast photoresponse. We have developed high-performance opto-microwave-compatible InP/InGaAs HPTs whose layer and fabrication process are fully compatible with ultrahigh-speed heterojunction bipolar transistors. The paper discusses the photocoupling structure, and it is shown that the back-illuminated structure with the aid of InP subcollector enables one to achieve a 100-GHz-class DOILO. The configuration and performance of the 100-GHz-class DOILO are then presented; in particular, injection locking from optical signals with a modulation or beat frequency of around the fundamental (
keywords={},
doi={},
ISSN={},
month={July},}
Copy
TY - JOUR
TI - Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1290
EP - 1298
AU - Hideki KAMITSUNA
AU - Tsugumichi SHIBATA
AU - Kenji KURISHIMA
AU - Minoru IDA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2003
AB - This paper discusses direct optical injection locking of a millimeter-wave oscillator using an InP/InGaAs heterojunction phototransistor (HPT) and its applications. Previously reported optically injection-locked oscillators (OILOs) are reviewed first. In particular, the features of a direct OILO (DOILO), where synchronization can be achieved by illuminating the active oscillator device itself, are discussed in comparison with the indirect OILO. DOILOs with excellent characteristics require high-performance transistors having both a high maximum oscillation frequency and fast photoresponse. We have developed high-performance opto-microwave-compatible InP/InGaAs HPTs whose layer and fabrication process are fully compatible with ultrahigh-speed heterojunction bipolar transistors. The paper discusses the photocoupling structure, and it is shown that the back-illuminated structure with the aid of InP subcollector enables one to achieve a 100-GHz-class DOILO. The configuration and performance of the 100-GHz-class DOILO are then presented; in particular, injection locking from optical signals with a modulation or beat frequency of around the fundamental (
ER -