Characterization of HfO2 Films Prepared on Various Surfaces for Gate Dielectrics
Summary :
We prepared HfO2 films by atomic layer deposition (ALD) on three kinds of silicon substrate surfaces (chemical oxide, HF-last surface and thermal oxide), and characterized their morphologies, structures, compositions, and crystallinities by physical analysis. The results revealed that the as-deposited HfO2 films consisted of nano-crystalline particles with a different crystalline system from that of the annealed films. The size of the nano-crystalline particles on the film on the chemical oxide was smaller than those on the other surfaces. The reason is thought to be the difference in OH concentration on the substrate surface. The predominant crystalline phases of all HfO2 films were monoclinic after annealing. Moreover, the film prepared on the chemical oxide had the smoothest surface after annealing. However, island structures with grain boundaries developed in the films on the other surfaces.
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- IEICE TRANSACTIONS on Electronics Vol.E87-C No.1 pp.17-23
- Publication Date
- 2004/01/01
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- Type of Manuscript
- Special Section PAPER (Special Section on High-κ Gate Dielectrics)
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Takashi YAMAMOTO, Yukiko IZUMI, Naoyuki SUGIYAMA, Kazuhiro YOSHIKAWA, Hideki HASHIMOTO, Yoshihiro SUGITA, "Characterization of HfO2 Films Prepared on Various Surfaces for Gate Dielectrics" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 1, pp. 17-23, January 2004, doi: .
Abstract: We prepared HfO2 films by atomic layer deposition (ALD) on three kinds of silicon substrate surfaces (chemical oxide, HF-last surface and thermal oxide), and characterized their morphologies, structures, compositions, and crystallinities by physical analysis. The results revealed that the as-deposited HfO2 films consisted of nano-crystalline particles with a different crystalline system from that of the annealed films. The size of the nano-crystalline particles on the film on the chemical oxide was smaller than those on the other surfaces. The reason is thought to be the difference in OH concentration on the substrate surface. The predominant crystalline phases of all HfO2 films were monoclinic after annealing. Moreover, the film prepared on the chemical oxide had the smoothest surface after annealing. However, island structures with grain boundaries developed in the films on the other surfaces.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_1_17/_p
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@ARTICLE{e87-c_1_17,
author={Takashi YAMAMOTO, Yukiko IZUMI, Naoyuki SUGIYAMA, Kazuhiro YOSHIKAWA, Hideki HASHIMOTO, Yoshihiro SUGITA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of HfO2 Films Prepared on Various Surfaces for Gate Dielectrics},
year={2004},
volume={E87-C},
number={1},
pages={17-23},
abstract={We prepared HfO2 films by atomic layer deposition (ALD) on three kinds of silicon substrate surfaces (chemical oxide, HF-last surface and thermal oxide), and characterized their morphologies, structures, compositions, and crystallinities by physical analysis. The results revealed that the as-deposited HfO2 films consisted of nano-crystalline particles with a different crystalline system from that of the annealed films. The size of the nano-crystalline particles on the film on the chemical oxide was smaller than those on the other surfaces. The reason is thought to be the difference in OH concentration on the substrate surface. The predominant crystalline phases of all HfO2 films were monoclinic after annealing. Moreover, the film prepared on the chemical oxide had the smoothest surface after annealing. However, island structures with grain boundaries developed in the films on the other surfaces.},
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - Characterization of HfO2 Films Prepared on Various Surfaces for Gate Dielectrics
T2 - IEICE TRANSACTIONS on Electronics
SP - 17
EP - 23
AU - Takashi YAMAMOTO
AU - Yukiko IZUMI
AU - Naoyuki SUGIYAMA
AU - Kazuhiro YOSHIKAWA
AU - Hideki HASHIMOTO
AU - Yoshihiro SUGITA
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2004
AB - We prepared HfO2 films by atomic layer deposition (ALD) on three kinds of silicon substrate surfaces (chemical oxide, HF-last surface and thermal oxide), and characterized their morphologies, structures, compositions, and crystallinities by physical analysis. The results revealed that the as-deposited HfO2 films consisted of nano-crystalline particles with a different crystalline system from that of the annealed films. The size of the nano-crystalline particles on the film on the chemical oxide was smaller than those on the other surfaces. The reason is thought to be the difference in OH concentration on the substrate surface. The predominant crystalline phases of all HfO2 films were monoclinic after annealing. Moreover, the film prepared on the chemical oxide had the smoothest surface after annealing. However, island structures with grain boundaries developed in the films on the other surfaces.
ER -
English
